341 nm emission from hydride vapor-phase epitaxy ultraviolet light-emitting diodes

Journal of Applied Physics - Tập 95 Số 12 - Trang 8247-8251 - 2004
Gary A. Smith1, Tuoc Dang1, Thomas R. Nelson1, Jeff L. Brown2, D. Tsvetkov3, A. Usikov3, V. Dmitriev3
1Sensors Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433
2Materials Directorate, Air Force Research Laboratory, Wright-Patterson AFB, Ohio 45433
3Technologies and Devices International, Inc., 12214 Plum Orchard Drive, Silver Spring, Maryland 20904

Tóm tắt

Hydride vapor-phase epitaxy (HVPE) was used to grow aluminum gallium nitride-based p–n diode structures on sapphire (0001) substrates. In the diode structure, an n-type AlGaN photon-emitting layer was sandwiched between n-type and p-type AlGaN cladding layers that contained higher AlN concentrations. These diode structures were processed and subsequently packaged into transistor outline cans. The light-emitting diodes (LEDs) were characterized using a state-of-the-art spectroradiometer. LED spectral emission occurred at a peak wavelength of 341 nm with a typical full width at half-maximum of approximately 14 nm. Pulsed injection currents of 110 mA resulted in greater than 2 mW of optical output power at a wavelength of 341 nm. This HVPE-grown LED’s pulsed optical power output level is comparable to reported results on similar sized metalorganic chemical vapor deposition grown ultraviolet LEDs with emission wavelengths near 340 nm.

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Journal of Applied Physics

Tập 95 Số 12

8247-8251

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