11.5ns 1M x 1/256K x 4TTL BiCMOS SRAM's with voltage- and temperature-compensated interfaces

Symposium 1989 on VLSI Circuits - 1989
Urakawa1, Matsui2, Suzuki2, Sato2, Hamano3, Kato4, Ochri
1TOSMBA Corp.
2Semiconductor Device Engineering Laboratory, Toshiba Corporation, Kawasaki, Japan
3Toshiba Microcomputer Engineering Corporation, Kawasaki, Japan
4ULSl Laboratory, Toshiba Corporation, Kawasaki, Japan

Tóm tắt

In high speed SRAM's a ground bounce noise caused by package lead inductance is serious limitation of access time.

Từ khóa

#Random access memory #BiCMOS integrated circuits #Temperature dependence #Delays #Current mirrors #Thermal stability #Photomicrography

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Symposium 1989 on VLSI Circuits

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