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Gravitational strings in models for elementary particles
Springer Science and Business Media LLC - Tập 18 - Trang 721-723 - 1975
Formation of a transition layer during heteroepitaxy of III–V compound semiconductors in gas-phase epitaxy systems
Springer Science and Business Media LLC - Tập 42 - Trang 17-21 - 1999
It is known that during gas-phase epitaxy of InP and GaAs the region of the film close to the heteroboundary is formed with altered phase, structural, and electrophysical properties. The main cause for this is formation of a transition layer due to a change in the growth mechanism (transition from nucleational to layer-step growth) and the structure of the growing surface (height and density of growth steps).
Gas-Discharge High-Frequency Generators for Materials Processing
Springer Science and Business Media LLC - Tập 62 - Trang 2069-2072 - 2020
A new approach to the selection of high-frequency oscillations generated in high-voltage glow discharge plasma is developed. It is based on the appearance of pressure pulsations arising during collisions of the inflowing working gas stream with an obstacle. A spatial inhomogeneity in concentration of high-voltage glow discharge plasma (14 kV and 30 mA) caused by pressure pulsations results in discharge combustion instability. The difference between the ignition and combustion voltages of the discharge provides the ionization processes as well as the high-frequency (HF) oscillations at a frequency of 5 MHz selected by an oscillatory circuit. The fraction of power transformed into HF-oscillations reaches 40%. Testing of this oscillator in etching of a lithium niobate crystal demonstrates that the surface charges are removed from the substrate not only by the plasma, but also by displacement and recharge currents. An etching rate of 5 μm/h has been achieved.
Mathematical Model of the Information Factor of the Evolution of the Lemaitre–Friedmann Primordial Atoms in Superspace-Time
Springer Science and Business Media LLC - - 2016
Kinetic equation for electrons of a semiconductor in a strong electric field: Green's resolvent
Springer Science and Business Media LLC - Tập 16 - Trang 906-909 - 1973
Using the Laplace transform of Boltzmann's equation, a system of linking equations is obtained for the series expansion of the mapping of the distribution function in powers of the field. Since the form of the equations is identical, instead of direct integration it is possible to use the method of Green's functions for the solution of the system. Using the method of perturbances Green's resolvent is constructed in the form of an infinite series. Using the example of the evaluation of the distribution function in a high-frequency field, the convergence of the proposed method is demonstrated.
Modulation of the velocity of soliton-like perturbations for the sine–Gordon equation with external force and dissipation
Springer Science and Business Media LLC - - 2009
Polarization echo in type-II superconductor powders
Springer Science and Business Media LLC - Tập 36 Số 7 - Trang 623-645 - 1993
The Franck-Hertz experiment in the laboratory work of students
Springer Science and Business Media LLC - Tập 15 - Trang 446-447 - 1972
Nontrivial conformally steckel metrics in einstein spaces
Springer Science and Business Media LLC - Tập 40 - Trang 995-999 - 1997
All isotropic conformally Steckel metrics are derived that satisfy the Einstein vacuum equations containing a Λ term and do not reduce to the purely Steckel type. The metrics allow the integration of the Hamilton-Jacobi equation for a massless particle by complete variable separation.
Characteristic features of exact solutions of the problem of an electron in the quantized field of a plane wave
Springer Science and Business Media LLC - Tập 20 - Trang 283-289 - 1977
The physical and mathematical features of exact solutions of the problem of an electron moving in the field of a quantized, plane electromagnetic wave [1–4] are investigated. In particular, the problem of constructing solutions for all values of the total energy of the system is solved. A new interpretation is given to the limiting approach to Volkov solutions [5, 6]. The completeness and orthogonality of the solutions are proven in the reference plane formalism. The notation of [4] is used in this paper.
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