Physica Status Solidi (B): Basic Research

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Der Restwiderstand von Aluminiumlegierungen bei der Entmischung
Physica Status Solidi (B): Basic Research - Tập 3 Số 9 - Trang 1661-1671 - 1963
R. Labusch
AbstractDer elektrische Widerstand Q von kugelförmigen silber‐ und zinkreichen Zonen in AlAg‐und AlZn‐Legierungen wird mit Methoden der Transporttheorie behandelt. Die experimentell gefundene Abhängigkeit des Widerstandes vom Zonenradius R mit einem Maximum bei etwa 10 Å weist auf ein Leitungsband hin, bei dem...... hiện toàn bộ
A simple model for amorphous antiferromagnets
Physica Status Solidi (B): Basic Research - Tập 44 Số 2 - Trang 613-617 - 1971
R. Hasegawa
AbstractA molecular field model for amorphous antiferromagnets is considered by taking into account the structural fluctuations which could exist in amorphous materials. The results show that the fluctuations shift the susceptibility versus temperature curves towards or away from the temperature axis with changes in the Néel temperatures. The direction of the shift...... hiện toàn bộ
ESR Studies of Cupric Ion in Various Oxide Glasses
Physica Status Solidi (B): Basic Research - Tập 30 Số 2 - Trang 469-478 - 1968
Hiroshi Imagawa
AbstractESR spectra of cupric ions in borate, silicate, and phosphate glasses were analyzed by the LCAO MO method of Maki and McGarvey. The covalency of the B2g π‐orbital was found to change with the bond strength of the network‐former. Particularly it reflected clearly the weakening of BO bonds in alkali borate glas...... hiện toàn bộ
On the Experimental Observation of Small Polarons in Semiconductors
Physica Status Solidi (B): Basic Research - Tập 27 Số 2 - Trang 479-488 - 1968
M.I. Klinger
AbstractAn analysis is made of experimental methods for observing small‐polaron conductivity in order to study the properties of small polarons. Special attention is paid to infrared absorption measurements. Some recent data on TiO2 are discussed.
The Small Polaron Problem with an Application to Optical and DC Data of Reduced Barium Titanate
Physica Status Solidi (B): Basic Research - Tập 24 Số 1 - Trang 281-287 - 1967
H.G. Reik, D. Heese
AbstractReflectivity data from 1 to 12 μm for four samples of reduced BaTiO3 with dc conductivities between 20 and 240 (Ωcm)−1 are analysed in terms of small a polaron theory. Quantitative agreement between theory and experiment is found except for the sample with the highest conductivity. By fitting the optical data it is ...... hiện toàn bộ
Structures and Energies of Symmetrical 〈011〉 Tilt Grain Boundaries in Silicon
Physica Status Solidi (B): Basic Research - Tập 137 Số 1 - Trang 11-20 - 1986
Masanori Kohyama, Ryōichi Yamamoto, Masao Doyama
AbstractThe structures and energies of a series of symmetrical 〈011〉 tilt grain boundaries in silicon are calculated for the first time using the tight‐binding type electronic theory (the bond orbital model). The boundary energies are highly dependent on the types and arrangements of the structural units which consist of 5‐, 6‐, 7‐, and 8‐membered rings of atoms. T...... hiện toàn bộ
Incorporation of Cd‐Interstitial Double Donors into CdS Single Crystals
Physica Status Solidi (B): Basic Research - Tập 12 Số 1 - Trang 57-70 - 1965
R. Boyn, O. Goede, S. Kuschnerus
AbstractThe incorporation of excess Cd into CdS crystals in a Cd atmosphere is studied experimentally. During the heat treatment in Cd vapour the conductivity (ν) of the crystals is measured as a function of Cd pressure (pCd) and temperature, between 400 and 730 °C. The relaxation of σ after a step‐like increase in p... hiện toàn bộ
The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and Temperature
Physica Status Solidi (B): Basic Research - Tập 36 Số 2 - Trang 705-716 - 1969
D. Shaw, R. C. Whelan
AbstractThe diffusion coefficient of Cd in undoped single crystal CdS has been measured at 850 °C as a function of Cd pressure, pCd, by a radiotracer method. The electrical conductivity of similar CdS samples has also been measured as a function of pCd in the temperature...... hiện toàn bộ
Band structure of solid o‐H2 with the molecular tight‐binding and OPW method
Physica Status Solidi (B): Basic Research - Tập 67 Số 1 - Trang 345-354 - 1975
Giuseppe Pastori Parravicini, Irène Villa, M. Vittori
AbstractThe band structure of f.c.c. solid hydrogen is computed using the molecular tight‐binding method for the valence band and the molecular OPW method for the conduction bands. The direct energy gap is found to be 15.1 eV and corresponds to the allowed transition L hiện toàn bộ
Acoustic wave amplification in quantum semiconductor structures
Physica Status Solidi (B): Basic Research - Tập 193 Số 2 - Trang 363-374 - 1996
Clóves Gonçalves Rodrigues, M. A. Amato, O. A. C. Nunes
AbstractA microscopic theory of acoustic wave amplification is presented for an ideal, periodic array of quantum wells (superlattice) in the presence of an applied electric field. The effect of the external field is to produce a drift velocity of the charge carriers in the superlattice heterostructure such that when this drift velocity exceeds the acoustic wave vel...... hiện toàn bộ
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