Canadian Journal of Physics

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Ion reflection from a single crystal
Canadian Journal of Physics - Tập 46 Số 6 - Trang 759-772 - 1968
V. E. Yurasova, V.I. Shulga, D.S. Karpuzov
The scattering of Ar, Ne, and He ions from the Cu {100} face has been investigated by a digital computer technique; only binary elastic collisions of ions with the lattice atoms have been considered; the angular and energy distribution at various directions of incidence are discussed. The scattering by surface atomic chains and its contribution to the general picture of ion reflection wer...... hiện toàn bộ
Optimum molecular constants and term values for the X2Π(ν ≤ 5) and A2Σ+(ν ≤ 3) states of OH
Canadian Journal of Physics - Tập 58 Số 7 - Trang 933-949 - 1980
John A. Coxon
Least-squares fits of 1618 A2Σ+–X2Π frequencies, 774 X2Π vibration–rotation frequencies, and 125 microwave frequencies have been made to effective 2Σ+ and 2Π Hamiltonians containing adjustable parameters for each vibrational level. The fitted p...... hiện toàn bộ
HORIZONTAL MOVEMENTS OF AURORA
Canadian Journal of Physics - Tập 36 Số 2 - Trang 160-170 - 1958
J. S. Kim, B. W. Currie
Measurements on the drifts of auroral forms at three stations to the south of the auroral zone in West-Central Canada failed to show evidence of a motion due to the earth's rotation relative to fixed excitation patterns in space. The distribution and the magnitude of the speed of auroral structures parallel and normal to the geomagnetic meridians are substantially the same as for non-lumi...... hiện toàn bộ
Single-crystal sputtering including the channeling phenomenon
Canadian Journal of Physics - Tập 46 Số 6 - Trang 739-745 - 1968
D. Onderdelinden
Measurements of the angular behavior of the sputtering ratio for Ar+ on (100) Cu turned around a [011] axis are presented for Ar+ energies of 5, 10, 15, 20, and 35 keV. It is shown that the widths of the [100] minima can be related to the acceptance angle for channeling, as described by the theory of Lindhard. This is taken as evidence for the ass...... hiện toàn bộ
Study of the Intermolecular Potentials for Hydrogen–Noble Gas Pairs via Molecular Beam Differential Scattering Measurements
Canadian Journal of Physics - Tập 53 Số 5 - Trang 435-444 - 1975
R. W. Bickes, G. Scoles, K. M. Smith
Differential collision cross sections for H2–noble gas pairs have been measured and analyzed via a best fit procedure. The data are well described by Lennard–Jones (12,6) (LJ) and Buckingham–Corner (BC) potentials and yield model independent values for σ, the location of the zero of the potential. For H2–Ne, H2–Ar, and H... hiện toàn bộ
Radiative Recombination in Cadmium Sulfide
Canadian Journal of Physics - Tập 50 Số 13 - Trang 1518-1538 - 1972
Konrad Colbow, K. Yuen
Luminescent centers involving Ag impurities were introduced into CdS single crystals through doping with 109Cd radioisotopes. Thus, the Ag concentration increases with time as more 109Cd decays. This enables a study of photoluminescence versus Ag concentration in a given crystal without changing the concentrations of other impurities.A new emissio...... hiện toàn bộ
Energy levels for the stable isotopes of atomic helium(4He I and 3He I)
Canadian Journal of Physics - Tập 84 Số 2 - Trang 83-105 - 2006
D. C. Morton, Qixue Wu, G. W. F. Drake
We calculate very accurate ab initio ionization energies for both 4He I and 3He I as well as the isotope shifts for n = 1 to 10, L = 0 to 7 and combined these with precise laboratory data to produce a new table of levels for 4He I and the first table for 3He I. We adopted an experimental ionization potenti...... hiện toàn bộ
ION IMPLANTATION OF SILICON: II. ELECTRICAL EVALUATION USING HALL-EFFECT MEASUREMENTS
Canadian Journal of Physics - Tập 45 Số 12 - Trang 4073-4089 - 1967
J. W. Mayer, O. J. Marsh, G. A. Shifrin, R. Baron
Hall-effect and sheet-resistivity measurements have been made on silicon samples implanted with Sb, Ga, and As ions at energies between 20 and 75 keV. These measurements determine the weighted average of the number Ns of carriers/cm2 and the carrier mobility in the implanted layer. A combination of Hall measurements and layer-removal techniques wa...... hiện toàn bộ
SOME OXYGEN IONS FORMED AT HIGH PRESSURES IN A MASS SPECTROMETER
Canadian Journal of Physics - Tập 38 Số 5 - Trang 642-651 - 1960
Wm. McGowan, Larkin Kerwin
The oxygen ions formed by electron bombardment and collision processes in the mass spectrometer at pressures of about 10−3 mm Hg are examined. Mass spectrum lines due to O+, [Formula: see text], [Formula: see text], and O++ as well as Aston bands due to O+, [Formula: see text], and [Formula: see text] are ...... hiện toàn bộ
AN EXPERIMENTAL STUDY OF BAND INTENSITIES IN THE FIRST POSITIVE SYSTEM OF N2: I. VIBRATIONAL TRANSITION PROBABILITIES
Canadian Journal of Physics - Tập 32 Số 7 - Trang 468-474 - 1954
R. G. Turner, R. W. Nicholls
Integrated intensities of 52 bands of the N2 first positive system have been measured using a recording infrared spectrometer. These data have been interpreted as vibrational transition probabilities which were compared with theoretical values calculated under the assumption that the electronic transition moment is independent of internuclear separation. The compariso...... hiện toàn bộ
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