American Vacuum Society

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Electronic Structure of Adsorbed Atoms and Molecules
American Vacuum Society - Tập 8 Số 1 - Trang 31-38 - 1971
T.B. Grimley
The coupling of an atom (or molecule) to a metal converts originally discrete levels which fall in the energy bands of the metal to virtual levels (resonances) with fractional occupancies determined by their positions with respect to the Fermi level. The calculation of these resonances and occupancies is a major problem in the theory of adsorption: It is discussed here in terms of a model ...... hiện toàn bộ
Nucleation, growth, and postdeposition thermally induced epitaxy of gold on sapphire
American Vacuum Society - Tập 16 Số 2 - Trang 622-624 - 1979
K. Heinemann, H. K. Kim, H. Poppa
Thin films of α-A12O3 were prepared for in situ TEM investigations of the nucleation and growth characteristics of various vapor-deposited materials. In this work, gold was deposited at 1.5×10−3nm s−1 at a substrate temperature of 650 °C until the average particle size had reached 8 nm. The nucleation and growth kinetics of these particles were recorded in situ in 0.5-s intervals. Coalesce...... hiện toàn bộ
High resolution, steep profile resist patterns
American Vacuum Society - Tập 16 Số 6 - Trang 1620-1624 - 1979
J. M. Moran, D. Maydan
High resolution and steep profile patterns have been generated in a 2.6 μm thick organic layer which conforms to the steps on a wafer surface and is planar on its top. This thick organic layer (a photoresist in the present experiments) is covered with an intermediate layer of SiO2 and a top, thin layer of x-ray or photoresist. After exposure and development of the top resist layer, the int...... hiện toàn bộ
High resolution trilevel resist
American Vacuum Society - Tập 21 Số 2 - Trang 672-676 - 1982
Masao Nagase, Yoshihiko Ozaki, Kazuya Hirata
A detailed study of film formation and directional etching for high-resolution trilevel resist was performed. The top layer was CMS and AZ-1350. The intermediate layer was ion beam sputter- deposited SiO2. The bottom layer was AZ-1370. High-temperature baking of the bottom layer prevents crack generation in the SiO2 intermediate layer. Reactive ion etching in O2 gas plamsa with a carbon el...... hiện toàn bộ
High absorptivity solar absorbing coatings
American Vacuum Society - Tập 11 Số 4 - Trang 793-796 - 1974
Donald M. Mattox, R.R. Sowell
A high absorptivity is essential in the efficient use of a solar collector. In this paper we review some of the fundamental considerations in solar absorbing coatings and present reflectance data on several chemically treated surfaces which appear to be black in the solar spectrum. Reflectivity data are also presented for a lead sulfide “selective paint” which uses a silicone binder.
Interaction of Atomic and Molecular Hydrogen Beams with Surfaces at Very Low Temperatures
American Vacuum Society - Tập 9 Số 2 - Trang 824-827 - 1972
G. Marenco, Andreas Schütte, G. Scoles, F. Tommasini
The transfer of energy from beams of atomic and molecular hydrogen to various surfaces (H2O, Ne, Ar) at liquid helium temperatures and UHV conditions has been investigated by means of a microcalorimetric technique. Evidence is given of the recombination of atomic hydrogen on H2O and Ar surfaces. Seeding the surfaces with up to one monolayer of H2 is found to increase the energy transfer by...... hiện toàn bộ
Auger−electron spectroscopy of high−temperature oxygen−rhenium interactions by AES
American Vacuum Society - Tập 12 Số 1 - Trang 338-340 - 1975
B. Wéber, B. Bigeard, J.P. Mihe, A. Cassuto
Sputtering of Chemisorbed Nitrogen with Ar+
American Vacuum Society - Tập 8 Số 1 - Trang 17-21 - 1971
Harold F. Winters
Flash filament techniques and mass spectrometry have been used to make sputtering measurements for nitrogen which is chemisorbed on a tungsten surface and bombarded with Ar+ ions. The sputtering rate for a given energy between 20 eV and 300 eV is described by the equation dN/dt=−S(N/)N0)ni, where N is the surface coverage, N0 the saturation surface coverage, ni the ion flux, and S the sput...... hiện toàn bộ
Structure Modification by Ion Bombardment during Deposition
American Vacuum Society - Tập 9 Số 1 - Trang 528-532 - 1972
Donald M. Mattox, G. J. Kominiak
It is shown that continuous or intermittent ion bombardment during deposition can change the growth mode of thick deposits formed by sputtering or evaporation. The columnar morphology commonly found when deposits exceed 1 μ in thickness can be disrupted and the deposit densified by negatively biasing the deposit and subjecting it to ion bombardment during growth. This effect is found to oc...... hiện toàn bộ
Effect of ion bombardment during deposition on thick metal and ceramic deposits
American Vacuum Society - Tập 11 Số 4 - Trang 671-674 - 1974
Robert D. Bland, G. J. Kominiak, D.M. Mattox
Energetic ion bombardment of metal and ceramic deposits during deposition is shown to affect the morphology, structure, stochiometry, and physical properties of the resulting deposit. The bombardment of the growing deposit tends to eliminate the columnar growth morphology normally encountered in thick-crystalline deposits. Generally, in metals it is found that internal stress, density, and...... hiện toàn bộ
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