American Vacuum Society
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Nucleation, growth, and postdeposition thermally induced epitaxy of gold on sapphire
American Vacuum Society - Tập 16 Số 2 - Trang 622-624 - 1979
Thin films of α-A12O3 were prepared for in situ TEM investigations of the
nucleation and growth characteristics of various vapor-deposited materials. In
this work, gold was deposited at 1.5×10−3nm s−1 at a substrate temperature of
650 °C until the average particle size had reached 8 nm. The nucleation and
growth kinetics of these particles were recorded in situ in 0.5-s intervals.
Coalescence and ...
High resolution, steep profile resist patterns
American Vacuum Society - Tập 16 Số 6 - Trang 1620-1624 - 1979
High resolution and steep profile patterns have been generated in a 2.6 μm thick
organic layer which conforms to the steps on a wafer surface and is planar on
its top. This thick organic layer (a photoresist in the present experiments) is
covered with an intermediate layer of SiO2 and a top, thin layer of x-ray or
photoresist. After exposure and development of the top resist layer, the
intermediat...
High resolution trilevel resist
American Vacuum Society - Tập 21 Số 2 - Trang 672-676 - 1982
A detailed study of film formation and directional etching for high-resolution
trilevel resist was performed. The top layer was CMS and AZ-1350. The
intermediate layer was ion beam sputter- deposited SiO2. The bottom layer was
AZ-1370. High-temperature baking of the bottom layer prevents crack generation
in the SiO2 intermediate layer. Reactive ion etching in O2 gas plamsa with a
carbon electrode ...
High absorptivity solar absorbing coatings
American Vacuum Society - Tập 11 Số 4 - Trang 793-796 - 1974
A high absorptivity is essential in the efficient use of a solar collector. In
this paper we review some of the fundamental considerations in solar absorbing
coatings and present reflectance data on several chemically treated surfaces
which appear to be black in the solar spectrum. Reflectivity data are also
presented for a lead sulfide “selective paint” which uses a silicone binder.
Interaction of Atomic and Molecular Hydrogen Beams with Surfaces at Very Low Temperatures
American Vacuum Society - Tập 9 Số 2 - Trang 824-827 - 1972
The transfer of energy from beams of atomic and molecular hydrogen to various
surfaces (H2O, Ne, Ar) at liquid helium temperatures and UHV conditions has been
investigated by means of a microcalorimetric technique. Evidence is given of the
recombination of atomic hydrogen on H2O and Ar surfaces. Seeding the surfaces
with up to one monolayer of H2 is found to increase the energy transfer by an
orde...
Auger−electron spectroscopy of high−temperature oxygen−rhenium interactions by AES
American Vacuum Society - Tập 12 Số 1 - Trang 338-340 - 1975
Sputtering of Chemisorbed Nitrogen with Ar+
American Vacuum Society - Tập 8 Số 1 - Trang 17-21 - 1971
Flash filament techniques and mass spectrometry have been used to make
sputtering measurements for nitrogen which is chemisorbed on a tungsten surface
and bombarded with Ar+ ions. The sputtering rate for a given energy between
20 eV and 300 eV is described by the equation dN/dt=−S(N/)N0)ni, where N is the
surface coverage, N0 the saturation surface coverage, ni the ion flux, and S the
sputtering r...
Structure Modification by Ion Bombardment during Deposition
American Vacuum Society - Tập 9 Số 1 - Trang 528-532 - 1972
It is shown that continuous or intermittent ion bombardment during deposition
can change the growth mode of thick deposits formed by sputtering or
evaporation. The columnar morphology commonly found when deposits exceed 1 μ in
thickness can be disrupted and the deposit densified by negatively biasing the
deposit and subjecting it to ion bombardment during growth. This effect is found
to occur in a...
Characterization of silver coatings deposited from a hollow cathode source
American Vacuum Society - Tập 11 Số 4 - Trang 663-665 - 1974
Silver coatings of 15–50-μ thickness were deposited from a hollow cathode source
with substrate bias voltage between 0 and −80 V, and deposition rates varied
from 2 to 30 μ/min. A study of the relationship between the substrate bias
voltage and the coating characteristics was made. The crystallographic
orientation of the coating varied with bias voltage. The microstructure and
microhardness of the...
Incorpation of Helium in Deposited Gold Films
American Vacuum Society - Tập 8 Số 1 - Trang 194-198 - 1971
It is shown that sputter deposited gold films containing atomic ratios of
helium-to-gold of up to 0.4 may be formed in a helium gas dc diode discharge.
Gas content is primarily a function of substrate temperature and bias, gas
pressure, and target voltage. Data indicate that high-energy neutral helium
atoms originating at the target are important in the gas incorporation at low
gas pressures and p...
Tổng số: 75
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