dv/dt Noise canceling circuit in ultra-high-voltage MOS gate drivers
Tóm tắt
A novel small-sized voltage mode noise canceling circuit is introduced in order to remove the dv/dt noise in the ultra-high-voltage MOS gate drive IC more efficiently, accurately and steadily. The dv/dt noise is removed completely by the mutual controlling of the high-side voltage signal, which improves the incapability of the full removal of dv/dt noise by conventional noise remove circuit due to the mismatch in the high-side circuit. In addition, no additional circuit is introduced to the noise canceling circuit. Fabricated in 700 V 0.5 μm BCD with simulation tool HspiceD, the circuit shows good performances of a quiescent current less than 50 μA, and a full removal of 70 V/ns dv/dt noise by the noise elimination function block. Moreover, a mismatch rate ranging within ±100 % can also be fully eliminated, thus ensuring the stability and reliability of the ultra-high-voltage gate driver’s performance.
Tài liệu tham khảo
Sukumar, V., Alahmad, M., Buck, K., Hess, H., Li, H., et al. (2008). High voltage MOSFET gate/bulk driver controller for a micro battery switch matrix in a 0.35 μm microwave SOI technology. Analog Integrated Circuits and Signal Processing, 54(3), 211–217.
Yang, Z., Ye, S., et al. (2008). A new dual-channel resonant gate drive circuit for low gate drive loss and low switching loss. IEEE Transactions on Power Electronics, 23(3), 1574–1583. doi:10.1109/TPEL.2008.920877.
Fujita, H. (2010). A resonant gate-drive circuit capable of high-frequency and high-efficiency operation. IEEE Transactions on Power Electronics, 25(4), 962–969. doi:10.1109/TPEL.2009.2030201.
Wendt, M., Thoma, L., Wicht, B., et al. (2008). A configurable high-side/low-side driver with fast and equalized switching delay. IEEE Journal of Solid-State Circuits, 43(7), 1617–1625. doi:10.1109/JSSC.2008.923734.
Richard, J.-F., Lessard, B. et al. (2003).High voltage interfaces for CMOS/DMOS technologies. The first IEEE Northeast Workshop on Circuits and systems (pp. 93–96), Montreal.
Mack, R. (2005). Demystifying switching power supplies. Amsterdam: Elsevier Inc.
Hwang, J. T., et al. (2006). Noise immunity enhanced 625 V high-side driver. Proceedings of the IEEE Solid State Circuits Conference (pp. 572–575). doi: 10.1109/ESSCIR.2006.307489.
Song, K.-N., et al. (2011). A resonant half bridge driver with novel common mode rejection technique implemented in 1.0 μm high voltage (650 V) DIMOS process. Microelectronics Journal, 42(1), 74–81.
Tam, D. C, & Choi, C. C. (1996). Reset dominant level-shift circuit for noise immunity. US patent, 5514981.
Chu, X., Wang, X., Wang, S., & Zhao, Y. (2011). Design of MOS gate drive circuit with high voltage and noise immunity. HuazhongKejiDaxueXuebao (ZiranKexue Ban)/Journal of Huazhong University of Science and Technology (Natural Science Edition), 39(6), 50–53.
Rabaey, J. M., et al. (2004). Digital integrated circuits: A design perspective (2nd ed.). Pecking: Tsinghua University Press.
Jianping, G., Cao, Y., & Xinquan, L. (2009). An inner ESR-fungible compensation technique for ultra low power low dropout regulators. Analog Integrated Circuits and Signal Processing, 61(3), 265–270.