ZnO Nanowire UV Photodetectors with High Internal Gain

Karpina V. A., 2004, Cryst. Res. Technol., 39, 992, 10.1002/crat.200310283

Goldberger J., 2005, J. Phys. Chem. B, 109, 14, 10.1021/jp0452599

Ng H. T., 2004, Nano Lett., 4, 1252

Pauzauskie P. J., 2006, Mater. Today, 9, 45, 10.1016/S1369-7021(06)71652-2

Zou B. S., 2006, J. Phys. Chem. B, 110, 12873

Wang Z. L., 2004, Annu. Rev. Phys. Chem., 55, 196

Özgür, 2005, J. Appl. Phys., 98, 041301, 10.1063/1.1992666

Kind H., 2002, Adv. Mater. (Weinheim, Germany), 14, 160, 10.1002/1521-4095(20020116)14:2<158::AID-ADMA158>3.0.CO;2-W

Law J. B. K., 2006, Appl. Phys. Lett., 88, 133114, 10.1063/1.2190459

Luo L., 2006, Sens. Actuators, A, 127, 206

Suehiro J., 2006, Nanotechnology, 17, 2573, 10.1088/0957-4484/17/10/021

Konenkamp R., 2004, Appl. Phys. Lett., 85, 6006, 10.1063/1.1836873

Kumar S., 2005, Nanotechnology, 16, 1171

Heo Y. W., 2004, J. Appl. Phys. Lett., 85, 2004

Hsu C.-L., 2005, Chem. Phys. Lett., 416, 78

Heo Y. W., 2005, Process

Keem K., 2004, Appl. Phys. Lett., 84, 4378, 10.1063/1.1756205

Fan Z. Y., 2004, Appl. Phys. Lett., 85, 6130

Soci, C.; Bao, X. Y.; Zhang, A.; Liu, J.; Wang, D.J. Nanosci.Nanotechnol.2007, to be submitted.

Bube R. H., 1992, Photoelectronic Properties of Semiconductors

Rose A., 1963, Concepts in Photoconductivity and Allied Problems

Jie J. S., 2006, Nano Lett., 6, 1892

Xiang B., 2006, Nano Lett., 7, 328

I− NW, 16 bit digital acquisition board (National Intruments PCI-6030E). The time delay between acquisitions was set at t = 100 ms

Takahashi Y., 1994, Jpn. J. Appl. Phys., Part 1, 33, 6615

Li Q. H., 2005, Appl. Phys. Lett., 86, 3

Li Q. H., 2004, Appl. Phys. Lett., 84, 4558

Li Q. H., 2004, Appl. Phys. Lett., 85, 6391

Mehta R. R., 1973, J. Appl. Phys., 44, 328

Matsuo N., 1984, Jpn. J. Appl. Phys., Part 2, 23, L301

Vilcot J. P., 1984, Electron. Lett., 20, 88, 10.1049/el:19840061

Katz O., 2001, Appl. Phys. Lett., 79, 1419

Futako W., 1998, J. Non-Cryst. Solids, 230, 224

Dohler G., 1986, IEEE J. Quantum Electron., 22, 1695, 10.1109/JQE.1986.1073179

Kurtz S. R., 1988, Appl. Phys. Lett., 53, 1963

Bube, R. H.Photoconductivity of Solids; Wiley:  New York, 1960; p 461.

To P, 2006, Z. H.

Hayden O., 2006, Nat. Mater., 5, 356, 10.1038/nmat1635

Yang C., 2006, Nano Lett., 6, 2934

Soci C., 2005, J. Phys. Rev. B, 72, 245204, 10.1103/PhysRevB.72.245204

The experimental value of the carrier lifetime (Tl= 33 s) and the estimated transit time (Tt= 30 ps) lead to an upper limit for the DC gain at low excitation level ofG∼ 1012(eq 3), somewhat larger than the values derived in Figure 3b (at a bandwidth ofB= 10 Hz) and Figure 4b (with a light intensity ofI= 1.6 × 10-5W/cm2), but consistent with the extrapolation at zero frequency of the −20 dB/decade line shown in Figure 4b. The deviation of the experimental data from the expected gain values at low modulation frequencies may be due to the presence of multiple time constants, which would result in multiple poles and zeros of the transfer functionG(ν).

Razeghi M., 1996, J. Appl. Phys., 79, 7473, 10.1063/1.362677

Auston D. H., 1983, IEEE J. Quantum Electron., 19, 648, 10.1109/JQE.1983.1071904

Fast transient photocurrent measurements were obtained by the Auston-switch technique, where ZnO nanowires were mechanically transferred onto a glass substrate and incorporated into a gold microstrip line with a gap between the electrodes ofd= 4 μm. The optical excitation was generated by the third harmonic (λ = 267 nm) of a Ti:sapphire laser system (SpectraPhysics) with pulse duration of <150 fs, and the transient photocurrent was measured using a fast boxcar integrating system (EG&G-PAR 4400); the overall temporal resolution of the measuring setup was less than 1 ns. Measurements in vacuum were performed in the vacuum chamber of a homemade cryostat at a pressure of <10-4Torr.

Cooke D., 2004, March Meeting 2004

Baxter J. B., 2006, J. Phys. Chem. B, 110, 25239