Zero biased Ge-on-Si photodetector on a thin buffer with a bandwidth of 3.2GHz at 1300nm

Materials Science in Semiconductor Processing - Tập 8 - Trang 423-427 - 2005
M. Jutzi1, M. Berroth1, G. Wöhl2, M. Oehme2, E. Kasper2
1Institute for Electrical and Optical Communication Engineering, Pfaffenwaldring 47, 70550 Stuttgart, Germany
2Institute for Semiconductor Engineering, Paffenwaldring 47, 70550 Stuttgart, Germany

Tài liệu tham khảo

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