White-light emission from near UV InGaN-GaN LED chip precoated with blue/green/red phosphors

IEEE Photonics Technology Letters - Tập 15 Số 1 - Trang 18-20 - 2003
Jinn‐Kong Sheu1, Shoou‐Jinn Chang2, Cheng‐Chien Kuo2, Yan‐Kuin Su2, Li-Chung Wu2, Y.C. Lin2, Wei‐Chih Lai2, J.M. Tsai3, Gou-Chung Chi4, Ruixia Wu5
1Opt. Sci. Center, Nat. Central Univ., Taiwan, Taiwan
2[Department of Electrical Engineering, Institute of Microelectronics, National Cheng Kung University, Taipei, Taiwan]
3[South Epitaxy Corporation, Taipei, Taiwan]
4[Optical Science Center, National Central University, Taipei, Taiwan]
5[Nantex Industry Corporation, Taipei, Taiwan]

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Tài liệu tham khảo

10.1063/1.118989

10.1117/12.382814

10.1143/JJAP.41.L371

10.1063/1.123844

10.1063/1.122246

10.1109/JSTQE.2002.801677

10.1016/S0038-1101(99)00319-6

sheu, 2001, low-operation voltage of ingan&ndash;gan light-emitting diodes by using a mg-doped al<formula><tex>$_{0.15}$</tex></formula>ga<formula> <tex>$_{0.85}$</tex></formula>n/gan superlattice, IEEE Electron Devices Lett, 22, 160, 10.1109/55.915597

10.1109/55.954911

10.1109/68.992574

10.1109/68.959351

10.1007/978-3-662-03462-0

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IEEE Photonics Technology Letters

Tập 15 Số 1

18-20

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