What limits the maximum output power of long-wavelength AlGaInAs/InP laser diodes?
Tóm tắt
We analyze the high-temperature continuous-wave performance of 1.3-/spl mu/m AlGaInAs/InP laser diodes grown by digital alloy molecular-beam epitaxy. Commercial laser software is utilized that self-consistently combines quantum-well bandstructure and gain calculations with two-dimensional simulations of carrier transport, wave guiding, and heat flow. Excellent agreement between simulation and measurements is obtained by careful adjustment of material parameters in the model. Joule heating is shown to be the main heat source; quantum-well recombination heat is almost compensated for by Thomson cooling. Auger recombination is the main carrier loss mechanism at lower injection current. Vertical electron escape into the p-doped InP cladding dominates at higher current and causes the thermal power roll-off. Self-heating and optical gain reduction are the triggering mechanisms behind the leakage escalation. Laser design variation is shown to allow for a significant increase in the maximum output power at high temperatures.
Từ khóa
#Power generation #Indium phosphide #Diode lasers #Trigeneration #Quantum well lasers #Radiative recombination #Spontaneous emission #Performance analysis #Digital alloys #Molecular beam epitaxial growthTài liệu tham khảo
10.1109/JQE.1983.1071954
seki, 1995, explanation for the temperature insensitivity of the auger recombination rates in 1.55 <formula><tex>$\mu$</tex></formula>m inp-based strained-layer quantum-well lasers, Applied Physics Letters, 66, 3093, 10.1063/1.113406
mogg, 2001, optimization of the barrier height in 1.3-micron ingaasp multiple-quantum-well active regions for high temperature operation, Proc SPIE Physics and Simulation of Optoelectronic Devices, 4283
10.1063/1.123165
10.1049/ip-opt:19990839
10.1109/3.792585
10.1016/S0022-0248(98)01490-0
10.1109/3.364396
10.1109/3.655016
10.1103/PhysRevB.43.9649
10.1049/el:20000789
10.1109/68.141990
10.1109/3.760325
10.1088/0965-0393/4/4/002
10.1002/352760281X
10.1109/3.825885
zah, 1994, high-performance uncooled 1.3- <formula> <tex>$\mu$</tex></formula>m algainas/inp strained-layer quantum-well lasers for subscriber loop applications, IEEE Journal of Quantum Electronics, 30, 511, 10.1109/3.283799
10.1109/2944.788430