Visualizing stress in silicon micro cantilevers using scanning confocal Raman spectroscopy

Microelectronic Engineering - Tập 85 - Trang 1443-1446 - 2008
M. Bauer1, A.M. Gigler1, C. Richter2, R.W. Stark1
1Center for NanoScience and Department of Earth and Environmental Sciences, Ludwig-Maximilians-Universität München, 80333 Munich, Germany
2NanoWorld Services GmbH, 91058 Erlangen, Germany

Tài liệu tham khảo

De Wolf, 1996, Semicond. Sci. Technol., 11, 139, 10.1088/0268-1242/11/2/001 Srikar, 2003, J. Microelectromech. Syst., 12, 779, 10.1109/JMEMS.2003.820280 Kouteva-Arguirova, 2003, J. Appl. Phys., 94, 4946, 10.1063/1.1611282 Beechem, 2007, Rev. Sci. Instrum., 78, 061301, 10.1063/1.2738946 Tsu, 1982, Appl. Phys. Lett., 41, 1016, 10.1063/1.93394 K. Dombrowski, edited by TU-Cottbus (2000). Hambir, 1997, J. Appl. Phys., 81, 2157, 10.1063/1.364269 Hare, 1995, J. Appl. Phys., 77, 5950, 10.1063/1.359177 Abel, 2007, J. Heat Transfer, 129, 329, 10.1115/1.2409996 Compaan, 1984, Phys. Rev. B, 29, 793, 10.1103/PhysRevB.29.793 Lucazeau, 2003, J. Raman Spectrosc., 34, 478, 10.1002/jrs.1027 Menendez, 1984, Phys. Rev. B, 29, 2051, 10.1103/PhysRevB.29.2051 Hart, 1970, Phys. Rev. B, 1, 638, 10.1103/PhysRevB.1.638 Weinstein, 1975, Phys. Rev. B, 12, 1172, 10.1103/PhysRevB.12.1172