Vertically coupled InP microdisk switching devices with electroabsorptive active regions

IEEE Photonics Technology Letters - Tập 14 Số 8 - Trang 1115-1117 - 2002
K. Djordjev1, Seung-June Choi1, Sang-Jun Choi1, P.D. Dapkus1
1Department of Electrical Engineering/Electrophysics, University of Southern California, Los Angeles, CA, USA

Tóm tắt

InP vertically coupled microdisk resonator/waveguide switching devices with an electroabsorptive (EA) active region are demonstrated for the first time. The devices exhibit single-mode operation, large free spectral range of 10.5 nm and a high quality factor of 5700. The EA effect provides a way of loss-trimming the resonant characteristics. Active switches, routers, and fast modulators based on these devices are envisioned as part of a WDM system.

Từ khóa

#Indium phosphide #Optical resonators #Optical modulation #Optical filters #Resonance #Optical waveguides #Coupling circuits #Carrier confinement #Q factor #Optical losses

Tài liệu tham khảo

10.1109/50.974825

10.1109/68.839031

10.1109/68.775327

10.1109/68.986803

10.1116/1.1445164

10.1109/68.849068

10.1109/68.766787

10.1109/50.588673

Thông tin
Thông tin xuất bản

IEEE Photonics Technology Letters

Tập 14 Số 8

1115-1117

Thông tin tác giả