Variations in the characteristics of CdxZn1−xS films deposited with little Cd-containing solutions

Optoelectronics Letters - Tập 19 - Trang 359-363 - 2023
Yifan Wang1, Yuming Xue1, Zhiyong Wang1, Binbin Wen1, Xin Xie1, Chaoqun Lü1
1Tianjin Key Laboratory of Film Electronic & Communication Devices, School of Integrated Circuit Science and Engineering, Tianjin University of Technology, Tianjin, China

Tóm tắt

In order to prepare CdxZn1−xS films with lower cadmium content and better performance as a buffer layer for copper indium gallium selenide (CIGS) solar cells, the performance of CdxZn1−xS films deposited in a mixture of solutions containing extremely low cadmium sources was systematically investigated by chemical bath deposition (CBD) with the synergy of chemical experiments and numerical simulations. The experimental results show that the films have the best overall performance at a cadmium source condition of 0.007 M.

Tài liệu tham khảo

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