Two-step anneals to avoid bridging during Co silicidation

Applied Surface Science - Tập 73 - Trang 162-166 - 1993
R.J. Schreutelkamp1, P. Vandenabeele1, B. Deweerdt1, R. Verbeeck1, K. Maex1
1IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

Tài liệu tham khảo

Rosser, 1985, Mater. Res. Soc. Symp. Proc., 35, 457, 10.1557/PROC-35-457 Davari, 1992, IEEE Trans. Electron Devices, 39, 959, 10.1109/16.127490 Murarka, 1985, J. Appl. Phys., 58, 971, 10.1063/1.336176 Broadbent, 1989, IEEE Trans. Electron Devices, 36, 2440, 10.1109/16.43664 Verhaar, 1989, 229 Morimoto, 1991, IEDM, 653 d'Heurle, 1985, Thin Solid Films, 128, 283, 10.1016/0040-6090(85)90080-X Norström, 1991, Microelectron. Eng., 14, 327, 10.1016/0167-9317(91)90016-7 Schreutelkamp, 1992, Microelectron. Eng., 19, 665, 10.1016/0167-9317(92)90518-V Pfiester, 1990, IEDM, 241 Vandenabeele, 1992, Mater. Res. Soc. Symp. Proc., 260, 653, 10.1557/PROC-260-653 Hobbs, 1991, Appl. Surf. Sci., 53, 321, 10.1016/0169-4332(91)90281-N Schreutelkamp, 1992, Mater. Res. Soc. Symp. Proc., 260, 145, 10.1557/PROC-260-145 1992, Appl. Phys. Lett., 61, 2296, 10.1063/1.108269