Two-dimensional thermal oxidation of silicon—I. Experiments
Tóm tắt
Từ khóa
Tài liệu tham khảo
sheng, 1978, Gate oxide thinning at the isolation oxide wall, J Electrochem Soc, 125, 432, 10.1149/1.2131467
chin, 1983, two-dimensional oxidation, IEEE Transactions on Electron Devices, 30, 744, 10.1109/T-ED.1983.21204
matsumoto, 1985, numerical modeling of nonuniform si thermal oxidation, IEEE Transactions on Electron Devices, 32, 132, 10.1109/T-ED.1985.21922
yoshikawa, 1984, Two-dimensional effect on suppression on thermal oxidation rate, Dig 16th Int Conf Solid-State Devices and Materials, 475
rovedo, 1980, Two dimension characterization of line edge profile of polycrystalline silicon oxidation
kao, 1985, two-dimensional silicon oxidation experiments and theory, 1985 International Electron Devices Meeting, 388
kao, 1985, Ann Rep Computer-Aided Design of Integrated Circuit Fabrication Process for VLSI Design
kao, 1985, iib-1 the role of stress in two-dimensional silicon oxidation, IEEE Transactions on Electron Devices, 32, 2530, 10.1109/T-ED.1985.22316
kao, 0, Two-dimensional thermal oxidation of silicon?II. The role of stress, IEEE Trans Electron Devices
gonzalez, 1985, a study of trenched capacitor structures, IEEE Electron Device Letters, 6, 215, 10.1109/EDL.1985.26102
mcvittie, 1985, Anisotropic etching of Si using SF<subscript>6</subscript> with C<subscript>2</subscript>C1F<subscript>5</subscript> and other mixed halocarbons, Proc 5th Symp Plasma Processing, 552
nicollian, 1982, MOS Physics and Technology, 681
heale, 1972, The Use of the Scanning Electron Microscope