Two-dimensional thermal oxidation of silicon—I. Experiments

IEEE Transactions on Electron Devices - Tập 34 Số 5 - Trang 1008-1017 - 1987
Dah-Bin Kao1,2, J.P. McVittie3, William D. Nix4, Krishna C. Saraswat3
1Fairchild Semiconductor Corporation, Palo Alto, CA, USA
2[Integrated Circuits Laboratory, University of Stanford, Stanford, CA, USA]
3Integrated Circuits and Systems Laboratory, Stanford, CA, USA
4Department of Material Science and Engineering, University of Stanford, Stanford, CA, USA

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