Tunneling Current Change of Graphite Surface by Single Ion Irradiation

Springer Science and Business Media LLC - Tập 438 - Trang 561-566 - 2012
H. Ogiso1,2, W. Mizutani1, S. Nakano2, H. Tokumoto1, K. Yamanaka2
1Joint Research Center for Atom Technology, National Institute for Advanced Interdisciplinary Research, Tsukuba, Ibaraki, Japan
2Mechanical Engineering Laboratory, Ibaraki, Japan

Tóm tắt

We discuss changes in electronic structure and the topography of a graphite surface undergoing by a single ion impact. Protrusion-like regions (PLRs) found in a scanning tunneling microscope image disappeared in the same view of a noncontact atomic force microscope image. We measured tunneling current versus voltage characteristics to determine the density-of-states change in PLRs. We found that the density of states at the Fermi level of PLRs was greater than that of the intact surface. We therefore concluded that the PLRs were not actual topographical changes, but originated from electronic structural changes in semimetal to metal transition.

Tài liệu tham khảo

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