Tunable Band Gap in Hydrogenated Quasi-Free-Standing Graphene

Nano Letters - Tập 10 Số 9 - Trang 3360-3366 - 2010
Danny Haberer1, D. V. Vyalikh2, Simone Taioli3,4, Balázs Dóra5, Mani Farjam6, J. Fink7,8, D. Marchenko7, Thomas Pichler9, K. Ziegler10, Stefano Simonucci11, M. S. Dresselhaus12, M. Knupfer1, B. Büchner1, A. Grüneis9,8
1Leibniz Institute for Solid State and Materials Research Dresden (IFW)
2Institut für Festkörperphysik, TU Dresden, Mommsenstrasse 13, D-01069 Dresden, Germany
3Department of Physics, University of Trento, Via Sommarive 14, I-38100, Trento, Italy
4Interdisciplinary Laboratory for Computational Science (LISC), FBK-CMM and University of Trento, via Sommarive 18, I-38123 Trento, Italy
5Department of Physics, Budapest University of Technology and Economics, Budafoki Ut 8, 1111, Budapest, Hungary
6Institute for Research in Fundamental Sciences (IPM), P.O. Box 19395-5531, Tehran, Iran
7Helmholtz-Zentrum Berlin für Materialien und Energie, Elektronenspeicherring BESSY II, Albert-Einstein-Strasse 15, D-12489 Berlin, Germany
8IFW Dresden, P.O. Box 270116, D-01171 Dresden, Germany
9Faculty of Physics, University of Vienna, Strudlhofgasse 4, 1090 Wien, Austria
10Institut für Physik, Universität Augsburg, D-86135 Augsburg, Germany
11Department of Physics, University of Camerino, via Madonna delle Carceri 9, 62032 Camerino, Italy
12Department of Physics and Department of Electrical Engineering and Computer Science, Massachusetts Institute of Technology, Cambridge, Massachusetts 02139-4307

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Nano Letters

Tập 10 Số 9

3360-3366

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