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E.R. Weber, N. Wiehl: To be published

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Quenching experiments from 1250 °C using phosphorus doped silicon failed to detect by EPR Si-E centers (Ps+V), the dominant defect in irradiatedn-Si. The detection limit was lower than 1011cm?3 [79]

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E.R. Weber, N. Wiehl, G. Borchardt, S.D. Brotherton: To be published

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H. Conzelmann, K. Graff, E.R. Weber: To be published

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Graff et al. [6] ascribe the Ev+0.21eV level to an (FeAl) acceptor and Ev+0.13 eV to the (FeAl) donor; however, as pointed out by Wünstel and Wagner [85] the lower level has to be due to some other complex and, in accordance with Feichtinger [131] the upper level corresponds to the (FeAl)0/+ donor, [97]

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