Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide

Nature Materials - Tập 8 Số 3 - Trang 203-207 - 2009
K. V. Emtsev1, Aaron Bostwick2, K. Horn3, Johannes Jobst4, G. L. Kellogg5, L. Ley1, J. L. McChesney2, Taisuke Ohta5, Sergey A. Reshanov4, Jonas Röhrl1, Eli Rotenberg2, Andreas K. Schmid6, Daniel Waldmann4, Heiko B. Weber4, Thomas Seyller1
1Lehrstuhl für Technische Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Erwin-Rommel-Str. 1, 91058 Erlangen, Germany
2Advanced Light Source, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, USA
3Department of Molecular Physics, Fritz-Haber-Institut der Max-Planck-Gesellschaft, Faradayweg 4-6, 14195, Berlin, Germany
4Lehrstuhl für Angewandte Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg, Staudtstr. 7, 91058 Erlangen, Germany
5Surface & Interface Sciences Department, Sandia National Laboratories, Albuquerque, New Mexico 87185, PO Box 5800, USA
6National Center for Electron Microscopy, Lawrence Berkeley National Laboratory, One Cyclotron Road, Berkeley, California 94720, USA

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