Three-dimensional structuring of silicon for sensor applications

Sensors and Actuators - Tập 4 - Trang 455-463 - 1983
H. Seidel1, L. Csepregi1
1Fraunhofer-Institut für Festkörpertechnologie, Paul-Gerhardt-Allee 42, D-8000 Munich 60 F.R.G.

Tài liệu tham khảo

Csepregi, 1980, Technologie dünngeätzter Siliziumfolien im Hinblick auf monolitisch integrierbare Sensoren, 1st Report NT 2506 Kendall, 1981, J. Electrochem. Soc., 128, 238C Seidel, 1982, Herstellung von Sensoren in Silizium mit Hilfe von anisotropen Ätzen, NTG Fachberichte, Sensoren-Technologie und Anwendung, Bad Nauheim, 42 Seidel, 1982, Studies on the anisotropy and selectivity of etchants used for the fabrication of stress-free structures, Electrochem. Soc. Spring Meeting, 194 Kendall, 1979, Vertical etching of silicon at very high aspect ratios, Ann. Rev. Mater. Sci., 9, 373, 10.1146/annurev.ms.09.080179.002105 Reisman, 1979, The controlled etching of silicon in catalyzed ethylenediamine-pyrocatechol-water solutions, J. Electrochem. Soc., 126, 1406, 10.1149/1.2129289 1979, ASTM Standards, 798 H. J. Herzog, personal communication. Petersen, 1978, Dynamic micromechanics on silicon techniques and devices, IEEE Trans. Electron Devices, 1241, 10.1109/T-ED.1978.19259 Bean, 1978, Anisotropic etching of silicon, IEEE Trans. Electron Devices, 1185, 10.1109/T-ED.1978.19250 Clark, 1979, Pressure sensitivity in anisotropically-etched thin-diaphragm pressure sensors, IEEE Trans. Electron Devices, 1887, 10.1109/T-ED.1979.19792 Jolly, 1980, Miniature cantilever beams fabricated by anisotropic etching of silicon, J. Electrochem. Soc., 127, 2750, 10.1149/1.2129585 Obermeier, 1982, Polykristalline Siliziumschichten als Basismaterial für Sensoren, NTG Fachberichte, Sensoren-Technologie und Anwendung, Bad Nauheim, 49