Thickness-dependent structural transition in GaAs nanocrystals grown on Si (111) surface

Journal of Crystal Growth - Tập 314 - Trang 365-369 - 2011
H. Yasuda1, K. Matsumoto2, T. Furukawa3, M. Imamura4, N. Nitta3, H. Mori1
1Research Center for Ultra-High Voltage Electron Microscopy, Osaka University, Ibaraki, Osaka, 567-0047, Japan
2Department of Intelligent Systems Design Engineering, Toyama Prefectural University, Imizu, Toyama 939-0398, Japan
3Department of Mechanical Engineering, Kobe University, Nada, Kobe, 657-8501, Japan
4Light Application Center, Saga University, Tosu, Saga 841-0005, Japan

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Journal of Crystal Growth

Tập 314

365-369

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