Thermoelectric optimization of AgBiSe2 by defect engineering for room-temperature applications

Physical Review B - Tập 99 Số 15
Zhenzhen Feng1,2, Xiaoli Zhang1,2, Yuanxu Wang3, Jihua Zhang4, Tiantian Jia1,2, Bingqiang Cao5, Yongsheng Zhang1,2
1Key Laboratory of Materials Physics, Institute of Solid State Physics, Chinese Academy of Sciences, Hefei 230031, China
2Science Island Branch of the Graduate School, University of Science and Technology of China, Hefei 230026, China
3Institute for Computational Materials Science, School of Physics and Electronics, Henan University, Kaifeng 475004, China
4Guizhou Provincial Key Laboratory of Computational Nano-Material Science, Guizhou Education University, Guiyang, 550018, China
5School of Physics and Physical Engineering, Shandong Provincial Key Laboratory of Laser Polarization and Information Technology, Qufu Normal University, Qufu 273165, China

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Physical Review B

Tập 99 Số 15

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