The theory and experiment of very-long-wavelength 256×1 GaAs/Al x Ga1−x As quantum well infrared detector linear arrays

Springer Science and Business Media LLC - Tập 51 - Trang 805-812 - 2008
FangMin Guo1,2, Qi Huang3,2, XiangYan Xu3,2, Wei Lu3,2, RuiJun Ding3,2, Ying Hou3,2, DaYuan Xiong3,2, JunMing Zhou3,2, HongLou Zhen3,2, Ning Li3,2
1National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics , Chinese Academy of Sciences, Shanghai, China
2Institute of Physics, Chinese Academy of Sciences, Beijing, China
3National Laboratory for Infrared Physics, Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai, China

Tóm tắt

The 256×1 linear array of multiple quantum wells infrared photodetector (QWIP) is designed and fabricated for the peak response wavelength at λ P = 14.6 μm. The response spectral width is bigger than 2.2 μm. The two-dimensional (2D) diffractive coupling grating has been formed on the top QWIP photosensitive pixel for coupling the infrared radiation to the infrared detective layers. The performance of the device at V B = 3 V and T = 45 K has the responsibility 4.28×10−2 (A/W), the blackbody detectivity D b* = 5.14×109 (cm·Hz1/2/W), and the peak detectivity D λ * = 4.24× 1010 (cm·Hz1/2/W). The sensor pixels are connected with CMOS read out circuit (ROC) hybridization by indium bumps. When integral time is 100 μs, the linear array has the effective pixel of QWIP FPA N ef of 99.2%, the average responsibility $$ \overline R $$ (V/W) of 3.48×106 (V/W), the average peak detectivity D λ * of 8.29×109 (cm·Hz1/2/W), and the non-uniformity UR of 5.83%. This device is ready for the thermal image application.

Tài liệu tham khảo

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