The study of the optical properties of the GaAs with point defects
Tài liệu tham khảo
Baum, 1995, Negative electron affinity photocathodes as high-performance electron sources—Part1: achievement of ultra-high brightness from an NEA photocathode, Proc. SPIE, 2522, 208, 10.1117/12.221575
Alley, 1995, The Stanford linear accelerator polarized electron source, Nucl. Instrum. Methods Phys. Res. Sect. A, 365, 1, 10.1016/0168-9002(95)00450-5
Aulenbacher, 2002, Pulse response of thin III/V semiconductor photocathodes, J. Appl. Phys., 92, 7536, 10.1063/1.1521526
Maruyama, 2002, A very high charge, high polarization gradient-doped strained GaAs photocathode, Nucl. Instrum. Methods Phys. Res. Sect. A, 492, 199, 10.1016/S0168-9002(02)01290-1
Siggins, 2001, Performance of a DC GaAs photocathode gun for the Jefferson lab FEL, Nucl. Instrum. Methods Phys. Res. Sect. A, 475, 549, 10.1016/S0168-9002(01)01596-0
Spicer, 1958, Photoemissive, photoconductive, and absorption studies of alkali antimony compounds, Phys. Rev., 112, 114, 10.1103/PhysRev.112.114
Yao, 2008, Structural, Optical and Electrical Properties of Hydrogen-Doped Amorphous GaAs Thin Films, Chin. Phys. Lett., 25, 1071, 10.1088/0256-307X/25/3/072
Morgan, 2002, First-principles study of As interstitials in GaAs: Convergence, relaxation, and formation energy, Phys. Rev. B, 66, 195302, 10.1103/PhysRevB.66.195302
Jorg, 1995, Van de Walle, Electronic structure and phase stability of GaAsl-xNx alloys, Phys. Rev. B, 51, 10568, 10.1103/PhysRevB.51.10568
Baraff, 1985, Electronic Structure, Total Energies, and Abundances of the Elementary Point Defects in GaAs, Appl. Phys. Lett., 55, 1327, 10.1103/PhysRevLett.55.1327
Oberg, 1995, First-principles calculations of the energy barrier to dislocation motion in Si and GaAs, Phys. Rev. B, 51, 13138, 10.1103/PhysRevB.51.13138
Wang, 1981, First-principles electronic structure of Si, Ge, GaP, GaAs, ZnS, and ZnSe.I. Self-consistent energy bands, charge densities, and efFective masses, Phys. Rev. B, 24
El Haj Hassan, 2010, Structural, electronic, optical and thermal properties of AlxGa1−xAsySb1−y quaternary alloys: First-principles study, J. Alloys Compd., 504, 559, 10.1016/j.jallcom.2010.05.161
Aspnes, 1983, Dielectric functions and optical parameters of Si, Ge, GaP, GaAs, GaSb, InP, InAs, and InSb from 1. 5 to 6. 0eV, Phys. Rev. B, 27, 895, 10.1103/PhysRevB.27.985
Perdew, 1981, Self-interaction correction to density-functional approximations for many-electron systems, Phys. Rev. B, 23, 5048, 10.1103/PhysRevB.23.5048
Perdew, 1996, Generalized gradient approximation made simple, Phys. Rev. Lett., 77, 3865, 10.1103/PhysRevLett.77.3865
Monkhorst, 1976, Special points for Brillouin-zone integrations, Phys. Rev. B, 13, 5188, 10.1103/PhysRevB.13.5188
Fang, 2001
Sheng, 2002
Briggs, 1990
Wang, 1992
Huang, 2002
Zhou, 1995
Shen, 2002