The performance and negative bias illumination stability of Hf-In-Zn-O thin film transistors on sputtering conditions

Hyun-Suk Kim1, Jin-Seong Park2
1Display Device Laboratory, Samsung Advanced Institute of Technology, Samsung Electronics Corporation, Yongin-Si, Republic of Korea
2Division of Materials Science and Engineering, Hanyang University, Seoul, Republic of Korea

Tóm tắt

This study examined the performance and stability of amorphous Hf-In-Zn-O (a-HIZO) thin film transistors (TFTs) with different sputtering conditions (DC and RF) for the active layer. The field-effect mobility and stability under negative bias illumination stress for the DC device significantly improved to 13.7 cm2/Vs and −1.5 V shift of threshold voltage, respectively, compared to those (2.4 cm2/Vs and −2.4 V shift) for the RF device. It is suggested that the incorporation of hydrogen into the RF-sputtered HIZO film has generated larger defect states in the vicinity of the HIZO/gate insulator interface, which may act as hole trap centers. This work demonstrates that the oxide TFTs combined with DC magnetron sputtering will be a prominent candidate for commercial production of the TFT backplane toward next-generation display applications.

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