The optical and electrical properties of Ba thin films for junction diode application by jet nebulizer spray pyrolysis method

Mohamed, 2011, p-Type transparent conducting copper-strontium oxide thin films for optoelectronic devices, Eur. Phys. J. Appl. Phys., 56, 30301, 10.1051/epjap/2011100463 Chaitra, U., AV Muhammed Ali, M. G. Mahesha, AkshayakumarKompa, DhananjayaKekuda, and K. Mohan Rao. “Property evaluation of spin coated Al doped ZnO thin films and Au/AZO/FTO Schottky diodes.”Superlattices and Microstructures155 (2021): 106903. Roy, 2008, Preparation and characterization of sol–gel derived copper–strontium–oxide thin films, Thin Solid Films, 516, 4093, 10.1016/j.tsf.2007.10.002 Louloudakis, D., M. Varda, EL Papadopoulou, M. Kayambaki, K. Tsagaraki, V. Kambilafka, M. Modreanu, G. Huyberechts, and E. Aperathitis.“Properties of strontium copper oxide (SCO) deposited by PLD using the 308 nm laser and formation of SCO / Si heterostructures.”physica status solidi (a)207, no.7 (2010): 1726-1730. Mohamed, 2011, “p-Type transparent conducting copper-strontium oxide thin films for optoelectronic devices”, Eur. Phys. J. Appl. Phys., 56, 30301, 10.1051/epjap/2011100463 Balasubramanian, 2017, Facile synthesis of orthorhombic strontium copper oxide microflowersfor highly sensitive nonenzymatic detection of glucose in human blood, J. Taiwan Inst. Chem. Eng., 81, 182, 10.1016/j.jtice.2017.10.040 Raja, 2016, Impact of annealing treatment on structural and dc electrical properties of spin coated tungsten trioxide thin films for Si/WO3/Ag junction diode, Mater. Sci. Semicond. Process., 56, 145, 10.1016/j.mssp.2016.08.007 Balaji, 2016, Role of substrate temperature on MoO3 thin films by the JNS pyrolysis technique for P-N junction diode application, Mater. Sci. Semicond. Process., 43, 104, 10.1016/j.mssp.2015.12.009 Marnadu, 2019, Ultra-high photoresponse with superiorly sensitive metal-insulator-semiconductor (MIS) structured diodes for UV photodetector application, Appl. Surf. Sci., 480, 308, 10.1016/j.apsusc.2019.02.214 Marnadu, 2018, Impact of Zr content on multiphase zirconium–tungsten oxide (Zr–WO x) films and its MIS structure of Cu/Zr–WO x/p-Si Schottky barrier diodes, J. Mater. Sci.: Mater. Electron., 29, 2618 Balasubramani, 2019, Impact of annealing temperature on spin coated V2O5 thin films as interfacial layer in cu/V2O5/n-si structured schottky barrier diodes, J. Inorg. Organomet. Polym Mater., 29, 1533, 10.1007/s10904-019-01117-z Vivek, 2019, Incorporation of Ba2+ ions on the properties of MoO3 thin films and fabrication of positive photo-response Cu/Ba–MoO3/p-Si structured diodes, Superlattices Microstruct., 133, 106197, 10.1016/j.spmi.2019.106197 V. Balasubramani, J. Chandrasekaran, Tien Dai Nguyen, S. Maruthamuthu, R. Marnadu, P. Vivek, and S. Sugarthi. “Colossal photosensitive boost in Schottky diode behaviour with Ce-V2O5 interfaced layer of MIS structure.”Sensors and Actuators A: Physical315 (2020): 112333. P. Vivek, J. Chandrasekaran, R. Marnadu, S. Maruthamuthu, V. Balasubramani, and P. Balraju. “Zirconia modified nanostructured MoO3 thin films deposited by spray pyrolysis technique for Cu/MoO3-ZrO2/p-Si structured Schottky barrier diode application.”Optik199 (2019): 163351. Marnadu, 2020, Jet nebulizer sprayed WO 3-nanoplate arrays for high-photoresponsivity based metal–insulator–semiconductor structured Schottky barrier diodes, J. Inorg. Organomet. Polym Mater., 30, 731, 10.1007/s10904-019-01285-y Marnadu, 2020, Impact of phase transformation in WO3 thin films at higher temperature and its compelling interfacial role in Cu/WO3/p–Si structured Schottky barrier diodes, ZeitschriftfürPhysikalischeChemie, 234, 355 V. Balasubramani, J. Chandrasekaran, V. Manikandan, R. Marnadu, P. Vivek, and P. Balraju. “Influence of rare earth doping concentrations on the properties of spin coated V2O5 thin films and Cu/Nd-V2O5/n-Si Schottky barrier diodes.”Inorganic Chemistry Communications119 (2020): 108072. V. Balasubramani, J. Chandrasekaran, V. Manikandan, Top Khac Le, R. Marnadu, and P. Vivek. “Upgraded photosensitivity under the influence of Yb doped on V2O5 thin films as an interfacial layer in MIS type Schottky barrier diode as photodiode application.”Journal of Solid State Chemistry(2021): 122289. Harishsenthil, 2021, Incorporation of Zn ions on high dielectric HfO2 thin films by spray pyrolysis and fabrication of Al/Zn@ HfO2/n-Si Schottky barrier diodes, Sens. Actuators A: Phys., 331, 112725, 10.1016/j.sna.2021.112725 V. Balasubramani, J. Chandrasekaran, V. Manikandan, Top Khac Le, R. Marnadu, and P. Vivek. “Improved photodetector performance of high-k dielectric material (La) doped V2O5 thin films as an interfacial layer in Schottky barrier diodes.”Surfaces and Interfaces25 (2021): 101297. Gowtham, 2021, Effect of surface modification of WO3 nanostructures on the performance for p-Si/n-WO3 structure diodes, Inorg. Chem. Commun., 130, 108695, 10.1016/j.inoche.2021.108695 B. Gowtham, V. Balasubramani, S. Ramanathan, MohdUbaidullah, Shoyebmohamad F. Shaikh, and GediSreedevi. “Dielectric relaxation, electrical conductivity measurements, electric modulus and impedance analysis of WO3 nanostructures.”Journal of Alloys and Compounds888 (2021): 161490. Harishsenthil, 2021, Fabrication of strontium included hafnium oxide thin film based Al/Sr: HfO 2/n-Si MIS-Schottky barrier diodes for tuned electrical behavior, New J. Chem., 45, 19476, 10.1039/D1NJ03563K Altındal, 2021, A comparison of electrical characteristics of Au/n-Si (MS) structures with PVC and (PVC: Sm 2 O 3) polymer interlayer, Phys. Scr., 96, 125838, 10.1088/1402-4896/ac19cb Farazin, Javid, Mehdi ShahediAsl, GholamrezaPirgholi-Givi, Seyed Ali Delbari, Abbas SabahiNamini, Şemsettin Altındal, and YasharAzizian-Kalandaragh. “Effect of (Co–TeO2-doped polyvinylpyrrolidone) organic interlayer on the electrophysical characteristics of Al/p-Si (MS) structures.”Journal of Materials Science: Materials in Electronics32, no. 17 (2021): 21909-21922. Yükseltürk, 2021, Illumination and voltage effects on the forward and reverse bias current–voltage (IV) characteristics in In/In2S3/p-Si photodiodes, J. Mater. Sci.: Mater. Electron., 32, 21825 Kaymaz, Ahmet, Esra EvcinBaydilli, Habibe UsluTecimer, Şemsettin Altındal, and YasharAzizian-Kalandaragh. “Evaluation of gamma-irradiation effects on the electrical properties of Al/(ZnO-PVA)/p-Si type Schottky diodes using current-voltage measurements.”Radiation Physics and Chemistry183 (2021): 109430. Tataroğlu, 2021, Electrical characterization of Au/n-Si (MS) diode with and without graphene-polyvinylpyrrolidone (Gr-PVP) interface layer, J. Mater. Sci.: Mater. Electron., 32, 3451 Demirezen, S., H. G. Çetinkaya, M. Kara, F. Yakuphanoğlu, and Şemsettin Altındal. “Synthesis, electrical and photo-sensing characteristics of the Al/(PCBM/NiO: ZnO)/p-Si nanocomposite structures.”Sensors and Actuators A: Physical317 (2021): 112449. Güçlü, 2019, Investigation of temperature dependent negative capacitance in the forward bias C-V characteristics of (Au/Ti)/Al2O3/n-GaAs Schottky barrier diodes (SBDs), Mater. Sci. Semicond. Process., 89, 26, 10.1016/j.mssp.2018.08.019 Şafak-Asar, 2015, Investigation of dielectric relaxation and ac electrical conductivity using impedance spectroscopy method in (AuZn)/TiO2/p-GaAs (1 1 0) schottky barrier diodes, J. Alloy. Compd., 628, 442, 10.1016/j.jallcom.2014.12.170 Sahar, 2014, Analysis of temperature dependent current-conduction mechanisms in Au/TiO2/n-4H-SiC (metal/insulator/semiconductor) type Schottky barrier diodes, J. Appl. Phys., 116 Tanrıkulu, 2017, Analysis of electrical characteristics and conduction mechanisms in the Al/(%7Zn-doped PVA)/p-Si (MPS) structure at room temperature, J. Mater. Sci.: Mater. Electron., 28, 8844 Eroğlu, 2020, A comparative study on the electrical properties and conduction mechanisms of Au/n-Si Schottky diodes with/without an organic interlayer, J. Mater. Sci.: Mater. Electron., 31, 14466 Şemsettin Altındal, Ali Barkhordari, Gholamreza Pirgholi-Givi, Murat Ulusoy, Hamidreza Mashayekhi, Süleyman Özçelik, and Yashar Azizian-Kalandaragh. “Comparison of the electrical and impedance properties of Au/(ZnOMn: PVP)/n-Si (MPS) type Schottky-diodes (SDs) before and after gamma-irradiation.”Physica Scripta96, no. 12 (2021): 125881. M. U. R. A. T., Ulusoy, Şemsettin Altındal, Y. Azizian-Kalandaragh, S. Özçelik, and Zeinab Mirzaei-Kalar. “The electrical characteristic of an MIS structure with biocompatible minerals doped (Brushite+ Monetite: PVC) interface layer.”Microelectronic Engineering(2022): 111768. A. A. Alsaç, T. Serin, S. O. Tan and Şemsettin Altındal, “Identification of Current Transport Mechanisms and Temperature Sensing Qualifications for Al/(ZnS-PVA)/p-Si Structures at Low and Moderate Temperatures,” IEEE Sensors Journal, vol. 22, no. 1, (2022; 99-106. Tan, 2020, Illumination dependent electrical data identification of the cdzno interlayered metal-semiconductor structures, Silicon, 12, 2885, 10.1007/s12633-020-00382-9 Vural, 2010, Current–voltage characteristics of Al/Rhodamine-101/n-GaAs structures in the wide temperature range, Curr. Appl Phys., 10, 761, 10.1016/j.cap.2009.09.011 Altuntaş, 2009, A detailed study of current–voltage characteristics in Au/SiO2/n-GaAs in wide temperature range, Microelectron. Reliab., 49, 904, 10.1016/j.microrel.2009.06.003 Adem Tataroğlu, Şemsettin Altındal, and Yashar Azizian-Kalandaragh. “Comparison of electrical properties of MS and MPS type diode in respect of (In2O3-PVP) interlayer.”Physica B: Condensed Matter576 (2020): 411733.