The microthyristor could be a promising microelectronics device

IEEE Transactions on Electron Devices - Tập 49 Số 10 - Trang 1821-1825 - 2002
A. Zekry1, I.M. Hafez1, M.M. El-Hady1
1Microelectronics Research Laboratory, Electronics and Communication Engineering Department, Faculty of Engineering, Ain Shams University, Cairo, Egypt

Tóm tắt

In this paper, a new microthyristor structure suitable for microelectronics applications has been introduced. A suitable technology for its implementation has been chosen. The microthyristor has been designed and its performance has been simulated. The device showed superior performance concerning the switching times and the power dissipation in addition to controllability of its S-curve. During the development of this work, we introduced some new concepts such as doping-engineered devices, thyristor turn-off by shunting its cathode junction, and power consumption reduction by realizing high resistances. The basic requirements and some conditions are put together for successful launch of the microthyristor in microelectronics.

Từ khóa

#Thyristors #Silicon on insulator technology #SPICE #Semiconductor device modeling #Isolation technology

Tài liệu tham khảo

gerlach, 1981, Thyristoren 10.1109/16.944197 sze, 1981, Physics of Semiconductor Devices 10.1109/16.2463 manobrio, 1993, Semiconductor Device Modeling With SPICE 10.1109/16.954488 10.1109/55.821677