The effect of the substrate on the Raman and photoluminescence emission of single-layer MoS2

Ayari, A.; Cobas, E.; Ogundadegbe, O.; Fuhrer, M. S. Realization and electrical characterization of ultrathin crystals of layered transition-metal dichalcogenides. J. Appl. Phys. 2007, 101, 014507.

Bao, W. Z.; Cai, X. H.; Kim, D.; Sridhara, K.; Fuhrer, M. S. High mobility ambipolar MoS2 field-effect transistors: Substrate and dielectric effects. Appl. Phys. Lett. 2013, 102, 042104.

Buscema, M.; Barkelid, M.; Zwiller, V.; van der Zant, H. S. J.; Steele, G. A.; Castellanos-Gomez, A. Large and tunable photothermoelectric effect in single-layer MoS2. Nano Lett. 2013, 13, 358–363.

Castellanos-Gomez, A.; Poot, M.; Steele, G. A.; van der Zant, H. S. J.; Agraït, N.; Rubio-Bollinger, G. Elastic properties of freely suspended MoS2 nanosheets. Adv. Mater. 2012, 24, 772–775.

Cooper, R. C.; Lee, C.; Marianetti, C. A.; Wei, X. D.; Hone, J.; Kysar, J. W. Nonlinear elastic behavior of two-dimensional molybdenum disulfide. Phys. Rev. B 2013, 87, 035423.

Castellanos-Gomez, A.; van Leeuwen, R.; Buscema, M.; van der Zant, H. S.; Steele, G. A.; Venstra, W. J. Single-layer MoS2 mechanical resonators. Adv. Mater. 2013, 25, 6719–6723.

Splendiani, A.; Sun, L.; Zhang, Y. B.; Li, T. S.; Kim, J.; Chim, C. Y.; Galli, G.; Wang, F. Emerging photoluminescence in monolayer MoS2. Nano Lett. 2010, 10, 1271–1275.

Mak, K. F.; Lee, C.; Hone, J.; Shan, J.; Heinz, T. F. Atomically thin MoS2: A new direct-gap semiconductor. Phys. Rev. Lett. 2010, 105, 136805.

Yin, Z. Y.; Li, H.; Li, H.; Jiang, L.; Shi, Y. M.; Sun, Y. H.; Lu, G.; Zhang, Q.; Chen, X. D.; Zhang, H. Single-layer MoS2 phototransistors. ACS Nano 2012, 6, 74–80.

Lee, H. S.; Min, S. W.; Chang, Y. G.; Park, M. K.; Nam, T.; Kim, H.; Kim, J. H.; Ryu, S.; Im, S. MoS2 nanosheet phototransistors with thickness-modulated optical energy gap. Nano Lett. 2012, 12, 3695–3700.

Mak, K. F.; He, K. L.; Lee, C.; Lee, G. H.; Hone, J.; Heinz, T. F.; Shan, J. Tightly bound trions in monolayer MoS2. Nat. Mater. 2013, 12, 207–211.

Zeng, H. L.; Dai, J. F.; Yao, W.; Xiao, D.; Cui, X. D. Valley polarization in MoS2 monolayers by optical pumping. Nat. Nanotechnol. 2012, 7, 490–493.

Mak, K. F.; He, K. L.; Shan, J.; Heinz, T. F. Control of valley polarization in monolayer MoS2 by optical helicity. Nat. Nanotechnol. 2012, 7, 494–498.

Xiao, D.; Liu, G. B.; Feng, W. X.; Xu, X. D.; Yao, W. Coupled spin and valley physics in monolayers of MoS2 and other group-vi dichalcogenides. Phys. Rev. Lett. 2012, 108, 196802.

Kioseoglou, G.; Hanbicki, A. T.; Currie, M.; Friedman, A. L.; Gunlycke, D.; Jonker, B. T. Valley polarization and intervalley scattering in monolayer MoS2. Appl. Phys. Lett. 2012, 101, 221907.

Sercombe, D.; Schwarz, S.; Pozo-Zamudio, O. D.; Liu, F.; Robinson, B. J.; Chekhovich, E. A.; Tartakovskii, I. I.; Kolosov, O.; Tartakovskii, A. I. Optical investigation of the natural electron doping in thin MoS2 films deposited on dielectric substrates. Sci. Rep. 2013, 3, 3489.

Mao, N. N.; Chen, Y. F.; Liu, D. M.; Zhang, J.; Xie, L. M. Solvatochromic effect on the photoluminescence of MoS2 monolayers. Small 2013, 9, 1312–1315.

Dean, C. R.; Young, A. F.; Meric, I.; Lee, C.; Wang, L.; Sorgenfrei, S.; Watanabe, K.; Taniguchi, T.; Kim., P.; Shepard, K. L. et al. Boron nitride substrates for high-quality graphene electronics. Nat. Nanotechnol. 2010, 5, 722–726.

Britnell, L.; Ribeiro, R. M.; Eckmann, A.; Jalil, R.; Belle, B. D.; Mishchenko, A.; Kim, Y. J.; Gorbachev, R. V.; Georgiou, T.; Morozov, S. V. et al. Strong light-matter interactions in heterostructures of atomically thin films. Science 2013, 340, 1311–1314.

Geim, A. K.; Grigorieva, I. V. Van der waals heterostructures. Nature 2013, 499, 419–425.

Lu, X. M.; Xia, Y. N. Electronic materials: Buckling down for flexible electronics. Nat. Nanotechnol. 2006, 1, 163–164.

Castellanos-Gomez, A.; Wojtaszek, M.; Tombros, N.; Agrait, N.; van Wees, B. J.; Rubio-Bollinger, G. Atomically thin mica flakes and their application as ultrathin insulating substrates for graphene. Small 2011, 7, 2491–2497.

Castellanos-Gomez, A.; Buscema, M.; Molenaar, R.; Singh, V.; Janssen, L.; Zant, H. S. J. v. d.; Steele, G. A. Deterministic transfer of two-dimensional materials by all-dry viscoelastic stamping. arXiv:1311.4829 2013.

Castellanos-Gomez, A.; Agrait, N.; Rubio-Bollinger, G. Optical identification of atomically thin dichalcogenide crystals. Appl. Phys. Lett. 2010, 96, 213116.

Late, D. J.; Liu, B.; Matte, H. S. S. R.; Rao, C. N. R.; Dravid, V. P. Rapid characterization of ultrathin layers of chalcogenides on SiO2/Si substrates. Adv. Funct. Mater. 2012, 22, 1894–1905.

Li, H.; Wu, J.; Huang, X.; Lu, G.; Yang, J.; Lu, X.; Xiong, Q.; Zhang, H. Rapid and reliable thickness identification of two-dimensional nanosheets using optical microscopy. ACS Nano 2013, 7, 10344–10353.

Castellanos-Gomez, A.; Barkelid, M.; Goossens, A. M.; Calado, V. E.; van der Zant, H. S. J.; Steele, G. A. Laser-thinning of MoS2: On demand generation of a single-layer semiconductor. Nano Lett. 2012, 12, 3187–3192.

Lee, C.; Yan, H.; Brus, L. E.; Heinz, T. F.; Hone, J.; Ryu, S. Anomalous lattice vibrations of single- and few-layer MoS2. ACS Nano 2010, 4, 2695–2700.

Novoselov, K. S.; Jiang, D.; Schedin, F.; Booth, T. J.; Khotkevich, V. V.; Morozov, S. V.; Geim, A. K. Two-dimensional atomic crystals. Proc. Natl. Acad. Sci. USA 2005, 102, 10451–10453.

Ferrari, A. C.; Meyer, J. C.; Scardaci, V.; Casiraghi, C.; Lazzeri, M.; Mauri, F.; Piscanec, S.; Jiang, D.; Novoselov, K. S.; Roth, S. et al. Raman spectrum of graphene and graphene layers. Phys. Rev. Lett. 2006, 97, 187401.

van der Zande, A. M.; Huang, P. Y.; Chenet, D. A.; Berkelbach, T. C.; You, Y.; Lee, G. H.; Heinz, T. F.; Reichman, D. R.; Muller, D. A.; Hone, J. C. Grains and grain boundaries in highly crystalline monolayer molybdenum disulphide. Nat. Mater. 2013, 12, 554–561.

Ji, Q. Q.; Zhang, Y. F.; Gao, T.; Zhang, Y.; Ma, D. L.; Liu, M. X.; Chen, Y. B.; Qiao, X. F.; Tan, P. H.; Kan, M. et al. Epitaxial monolayer MoS2 on mica with novel photoluminescence. Nano Lett. 2013, 13, 3870–3877.

Li, S. L.; Miyazaki, H.; Song, H.; Kuramochi, H.; Nakaharai, S.; Tsukagoshi, K. Quantitative raman spectrum and reliable thickness identification for atomic layers on insulating substrates. ACS Nano 2012, 6, 7381–7388.

Casiraghi, C.; Hartschuh, A.; Lidorikis, E.; Qian, H.; Harutyunyan, H.; Gokus, T.; Novoselov, K. S.; Ferrari, A. C. Rayleigh imaging of graphene and graphene layers. Nano Lett. 2007, 7, 2711–2717.

Rice, C.; Young, R. J.; Zan, R.; Bangert, U.; Wolverson, D.; Georgiou, T.; Jalil, R.; Novoselov, K. S. Raman-scattering measurements and first-principles calculations of strain-induced phonon shifts in monolayer MoS2. Phys. Rev. B 2013, 87, 081307.

Chakraborty, B.; Bera, A.; Muthu, D. V. S.; Bhowmick, S.; Waghmare, U. V.; Sood, A. K. Symmetry-dependent phonon renormalization in monolayer MoS2 transistor. Phys. Rev. B 2012, 85, 161403.

Hui, Y. Y.; Liu, X. F.; Jie, W. J.; Chan, N. Y.; Hao, J. H.; Hsu, Y. T.; Li, L. J.; Guo, W. L.; Lau, S. P. Exceptional tunability of band energy in a compressively strained trilayer MoS2 sheet. ACS Nano 2013, 7, 7126–7131.

McKeown, D. A.; Bell, M. I.; Etz, E. S. Vibrational analysis of the dioctahedral mica: 2m∼ 1 muscovite. Am. Mineral. 1999, 84, 1041–1048.

Ghatak, S.; Pal, A. N.; Ghosh, A. Nature of electronic states in atomically thin MoS2 field-effect transistors. ACS Nano 2011, 5, 7707–7712.

Tongay, S.; Zhou, J.; Ataca, C.; Liu, J.; Kang, J. S.; Matthews, T. S.; You, L.; Li, J. B.; Grossman, J. C.; Wu, J. Q. Broad-range modulation of light emission in two-dimensional semiconductors by molecular physisorption gating. Nano Lett. 2013, 13, 2831–2836.

Jones, A. M.; Yu, H. Y.; Ghimire, N. J.; Wu, S. F.; Aivazian, G.; Ross, J. S.; Zhao, B.; Yan, J. Q.; Mandrus, D. G.; Xiao, D. et al. Optical generation of excitonic valley coherence in monolayer WSe2. Nat. Nanotechol. 2013, 8, 634–638.

Limited, R. T. In Polymers in rheology conference: A two-day conference, Shrewsbury, UK, 26th & 27th April, 2001.

Lefebvre, J.; Homma, Y.; Finnie, P. Bright band gap photoluminescence from unprocessed single-walled carbon nanotubes. Phys. Rev. Lett. 2003, 90, 217401.

Avouris, P.; Freitag, M.; Perebeinos, V. Carbon-nanotube optoelectronics. In Carbon nanotubes. Springer: Berlin Heidelberg, 2008; pp 423–454.

Avouris, P.; Freitag, M.; Perebeinos, V. Carbon-nanotube photonics and optoelectronics. Nat. Photon. 2008, 2, 341–350.

Kim, J.; Cote, L. J.; Kim, F.; Huang, J. X. Visualizing graphene based sheets by fluorescence quenching microscopy. J. Am. Chem. Soc. 2010, 132, 260–267.

Gaudreau, L.; Tielrooij, K. J.; Prawiroatmodjo, G. E. D. K.; Osmond, J.; de Abajo, F. J. G.; Koppens, F. H. L. Universal distance-scaling of nonradiative energy transfer to graphene. Nano Lett. 2013, 13, 2030–2035.

Swathi, R. S.; Sebastian, K. L. Long range resonance energy transfer from a dye molecule to graphene has (distance)-4 dependence. J. Chem. Phys. 2009, 130, 086101.

Adarsh, S.; Klaus, K.; Kannan, B. Marker-free on-the-fly fabrication of graphene devices based on fluorescence quenching. Nanotechnology 2010, 21, 015303.

Chen, Z. Y.; Berciaud, S.; Nuckolls, C.; Heinz, T. F.; Brus, L. E. Energy transfer from individual semiconductor nanocrystals to graphene. ACS Nano 2010, 4, 2964–2968.

Ross, J. S.; Wu, S. F.; Yu, H. Y.; Ghimire, N. J.; Jones, A. M.; Aivazian, G.; Yan, J. Q.; Mandrus, D. G.; Xiao, D.; Yao, W. et al. Electrical control of neutral and charged excitons in a monolayer semiconductor. Nat. Commun. 2013, 4, 1474.

Ron, A.; Yoon, H. W.; Sturge, M. D.; Manassen, A.; Cohen, E.; Pfeiffer, L. N. Thermodynamics of free trions in mixed type GaAs/AlAs quantum wells. Solid State Commun. 1996, 97, 741–745.