The dynamics hysteresis loop and dielectric susceptibility characteristics of a ferroelectric heterostructure

Springer Science and Business Media LLC - Tập 93 - Trang 1445-1452 - 2019
Lian Cui1,2, Zelong He1, Jixin Che3
1School of Electronic and Information Engineering, Yangtze Normal University, Chongqing, China
2School of Mechatronics Engineering, Daqing Normal University, Daqing, China
3Aviation Operations Service College, Air Force Aviation University, Changchun, China

Tóm tắt

The dynamic properties, including hysteresis loop and dielectric susceptibility, of a ferroelectric heterostructure composed by two different films have been discussed, by means of a Landau–Devonshire theory in combination with Landau–Khalatnikov dynamic equation. The surface transition layer within each component film and a ferroelectric coupling at the interface between two films are taken into account. A parameter is introduced to describe the differences of physical properties between two constituent films. The results show that if the ferroelectric interfacial coupling is large enough, the system will lead to the severe hysteresis phenomenon for hysteresis loop and four peaks of the curve for dielectric susceptibility versus the electric field.

Tài liệu tham khảo

M Liu, C Ma, G Collins, J Liu, C L Chen and C Dai et al. ACS Appl. Mater. Interfaces 4 5761 (2012) K G Lim, K H Chew, L H Ong and M Iwata Solid State Phenomena 232 169 (2015) D V Nordheim, A Austin, B Ploss and K H Chew IEEE Trans. Dielectr. Electr. Insul. 23 129 (2016) S S Mane, A N Tarale, S G Chavan, V R Reddy, P B Joshi, D J Salunkhe Indian J. Phys. 90 519 (2016) A Mohanta, D. Behera, S Panigrahi, N C Mishra Indian J. Phys. 83 455 (2009) M Tyunina, L Yao, M Plekh, J Levoska and S V Dijken Adv. Funct. Mater. 23 467 (2013) K H Chew, K G LIM and L H Ong Ferroelectirc 490 149 (2016) X Y Li, I LVrejoiu, M Ziese A Gloter and P A V Aken Sci. Rep. 7 40068 (2017) M Dawber and E Bousquet MRS Bull. 38 1048 (2013) P Zubko, N Jecklin, A T Pardo, P A Puente, A Gloter and C Lichtensteiger et al. Nano Lett. 12 2846 (2012) F C Sun, M T Kesim, Y Espinal and S P Apay J. Mater. Sci. 51 499 (2016) T Lü and W Cao Phys. Rev. B 66 024102 (2002) L Cui, H Y Cui and Y C Li Chin. J. Phys. 56 185 (2018) L Cui, F H Cao, H Y Cui, Y C Li and R Yang Phys. Status Solidi B 255 1700371 (2018) P S Bednyakov, I V Shnaidshtein and B A Strukov Ferroelectric 500 203 (2016) R N Mantegna, B Spagnolo, L Testa and M Trapanese J. Appl. Phys. 97 10E519 (2005) N V Agudova, A A Dubkova, B Spagnolob Physica A 325 144 (2003) V C Lo J. Appl. Phys. 94 3353 (2003) L Cui, H Y Cui, C M Wu, G H Yang, Z L He and Y L Wang et al. Sur. Rev. Lett. 23 1650010 (2016) Y Gagou, J Belhadi, B Asbani, M ElMarssi, J L Dellis and Y I Yuzyuk et al. Mater. Des. 122 157 (2017) P Salve, A Mahayni and A Grigoriev Phys. Rev. B 93 041423 (2016)