The black silicon method: a universal method for determining the parameter setting of a fluorine-based reactive ion etcher in deep silicon trench etching with profile control

10.1116/1.586085

Yeam G-Y, 1992, J. Electron. Soc., 139, 575, 10.1149/1.2069260

10.1016/0167-9317(91)90133-X

10.1116/1.586462

Pornot C, 1986, J. Vac. Sci. Technol., 4, 1

10.1063/1.102127

Winters H, 1983, J. Vac. Sci. Technol., 1, 469, 10.1116/1.582629

10.1016/0167-9317(87)90087-6

10.1016/0924-4247(94)85031-3

10.1016/0167-9317(94)90176-7

Gobrecht J

Syau T, 1991, J. Electrochem. Soc., 138, 3076, 10.1149/1.2085371

Zhang J M, 1983, J. Vac. Sci. Technol., 1, 1037, 10.1116/1.582670

Legtenberg R, 1995, J. Electron. Soc.

10.1016/0167-9317(94)00149-O

10.1016/0924-4247(94)80101-0