The application of automatic X-ray rocking curves to the characterization of silicon on sapphire

Journal of Crystal Growth - Tập 60 - Trang 264-274 - 1982
A. Rey1, J. Trilhe1, J. Borel1
1Circuits Intégrés Thomson EFCIS, BP 217, F-38019 Grenoble Cedex, France

Tài liệu tham khảo

Gonchond, 1978, Thesis Trilhe, 1980, J. Appl. Phys., 51, 2003, 10.1063/1.327917 Weitzel, 1977, J. Electrochem. Soc., 124, 1080, 10.1149/1.2133487 1970, Vol. 1, 11 Wilkens, 1970, Phys. Status Solidi (a), 2, 359, 10.1002/pssa.19700020224 Rey, 1981, Thesis Zorilla Carfagnini, 1981, J. Electrochem. Soc., 128, 385, 10.1149/1.2127427 Picraux, 1973, J. Appl. Phys., 44, 594, 10.1063/1.1662230