The application of automatic X-ray rocking curves to the characterization of silicon on sapphire

Journal of Crystal Growth - Tập 60 - Trang 264-274 - 1982
A. Rey1, J. Trilhe1, J. Borel1
1Circuits Intégrés Thomson EFCIS, BP 217, F-38019 Grenoble Cedex, France

Tài liệu tham khảo