The MN+1AXN phases: A new class of solids

Nowotny, 1970, Struktuchemie Einiger Verbindungen der Ubergangsmetalle mit den elementen C, Si, Ge, Sn, 2, 27

Jeitschko, 1963, Kohlenstoffhaltige ternare Verbindungen (H-Phase), Monatsh. Chem., 94, 672, 10.1007/BF00913068

Jeitschko, 1963, Kohlenstoffhaltige ternare Verbindungen (V-Ge-C, Nb-Ga-C, Ta-Ga-C, Ta-Ge-C, Cr-Ga-C und Cr-Ge-C), Monatsh. Chem., 94, 844, 10.1007/BF00902358

Jeitschko, 1963, Ti2AlN, eine Stickstoffhaltige H-Phase, Monatsh. Chem., 94, 1198, 10.1007/BF00905710

Jeitschko, 1964, Die H-Phasen: Ti2CdC, Ti2GaC, Ti2GaN, Ti2InN, Zr2InN and Nb2GaC, Monatsh. Chem., 95, 178, 10.1007/BF00909264

Jeitschko, 1964, Phasen mit Aufgefulltem Ti2Ni-Typ, Monatsh. Chem., 95, 1004, 10.1007/BF00908814

Jeitschko, 1964, Die H-phasen Ti2TlC, Ti2PbC, Nb2InC, Nb2SnC und Ta2GaC, Monatsh. Chem., 95, 431, 10.1007/BF00901306

Jeitschko, 1963, Die H-phasen Ti2InC, Hf2InC und Ti2GeC, Monatsh. Chem., 94, 1201, 10.1007/BF00905711

Boller, 1966, Ronthenographische Untersuchungen in System: V-As-C, Monatsh. Chem., 97, 1053, 10.1007/BF00903553

Reiffenstein, 1966, Strukturchemische und magnetochemische Untersuchungen an Komplecarbiden, Monatsh. Chem., 97, 1428, 10.1007/BF00902593

Jeitschko, 1967, Die Kristallstructur von Ti3SiC2 — Ein Neuer Komplxcarbid-Typ, Monatsh. fur Chem., 98, 329, 10.1007/BF00899949

Wolfsgruber, 1967, Die Kristallstuktur von Ti3GeC2, Monatsh. Chem., 98, 2401, 10.1007/BF00902438

Beckmann, 1968, Neue H-Phasen, Monatsh. Chem., 99, 1581, 10.1007/BF00902709

Boller, 1968, Die Kristallstruktur von V2PC und V5P3N, Monatsh. Chem., 99, 672, 10.1007/BF00901220

Beckmann, 1969, Einige Komplexcarbide und -nitride in den Systemen Ti-solZn,Cd,Hg-C,Nsol und Cr-Ga-N, Monatsh. Chem., 100, 1465, 10.1007/BF00900159

Beckmann, 1969, Monatsh. Chem., 100, 1465, 10.1007/BF00900159

Nowotny, 1973, 3, 171

Schuster, 1980, The Ternary Systems: Cr-Al-C, V-A1-C and Ti-Al-C and the Behavior of the H-phases (M2AlC), J. of Solid State Chem., 32, 213, 10.1016/0022-4596(80)90569-1

Pietzka, 1994, Summary of Constitution Data of the System Al-C-Ti, J. Phase Equilibria, 15, 392, 10.1007/BF02647559

Pietzka, 1992, The Ternary Boundary Phases of the Quaternary System Ti-Al-C-N

Ivchenko, 1976, Preparartion and Some Properties of the Ternary Compound Ti2AlN, Porosh. Metall., 160, 60

Ivchenko, 1975, Conditions of Preparation of Ternary Ti-C-Al alloy Powders, Porosh. Met., 150, 1

Ivchenko, 1976, Some Physical Properties of Ternary Compounds in the System Ti-Al-C, Porosh. Metall., 161, 45

Ivchenko, 1976, Abrasive Properties of the Ternary Compounds in the System Ti-Al-C and Ti-Al-N, Porosh. Met., 164, 56

Nickl, 1972, Gasphasenabscheidung im Systeme Ti-C-Si, J. Less Common Metals, 26, 283, 10.1016/0022-5088(72)90083-5

Goto, 1987, Chemically Vapor Deposited Ti3SiC2, Mat. Res. Bull., 22, 1195, 10.1016/0025-5408(87)90128-0

Racault, 1994, Chemically Vapor Deposition of Ti3SiC2 from TiCl4-SiCl4-CH4-H2 Gas Mixtures, J. Mater. Sci., 29, 3941, 10.1007/BF00355952

Racault, 1994, On the Chemical Vapor Deposition of Ti3SiC2 from TiCl4-SiCl4-CH4-H2 Gas Mixtures: Part II an experimental approach, J. Mater. Sci., 29, 5023, 10.1007/BF01151093

Pickering, 1999, Microstructure of Ti3SiC2 Coatings Synthesized by CVD, 96

Bruckl, 1966, Ternary Phase Equilibria in Transition Metal-B-C-Si Systems, Vol. VII

Arunajatesan, 1995, Synthesis of Ti3SiC2, J. Amer. Cer. Soc., 78, 667, 10.1111/j.1151-2916.1995.tb08230.x

Racault, 1994, Solid State Synthesis and Characterization of the Ternary Phase Ti3SiC2, J. Mater. Sci., 29, 3384, 10.1007/BF00352037

Pampuch, 1989, Solid Combustion Synthesis of Ti3SiC2, J. Eur. Ceram. Soc., 5, 283, 10.1016/0955-2219(89)90022-8

Lis, 1992, Reactions During SHS in a Ti-Si-C System, Int. J. of Self-Propagating High-Temp. Synth., 1, 401

Pampuch, 1993, Ti3SiC2-Based Materials Produced by Self-Propagating High Temperature Synthesis and Ceramic Processing, J. Mater. Synth. Process., 1, 93

Lis, 1993, New Ceramics Based on Ti3SiC2, Ceramics Inter., 19, 219, 10.1016/0272-8842(93)90052-S

Lis, 1995, Ti3SiC2-Based Materials Prepared by HIP-SHS Techniques, Mater. Lett., 22, 163, 10.1016/0167-577X(94)00246-0

Morgiel, 1996, Microstructure of Ti3SiC2-based Ceramics, Mater. Lettrs., 27, 85, 10.1016/0167-577X(95)00259-6

Okano, 1993, Synthesis and Mechanical Properties of Ti3SiC2 Ceramic, Trans. Met. Soc. Jpn., 14A, 597

Tong, 1995, Synthesis and High Temperature Mechanical Properties of Ti3SiC2/SiC Composites, J. Mater. Sci., 30, 3087, 10.1007/BF01209221

Panczyk, 1972, Production of Ti3SiC2 from the Gas Phase and Some Chemical and Physical Properties, Szklo Ceram., 23, 144

1972, Chem. Abs., 77, 64084c

Iseki, 1990, Wetting and Properties of Reaction Products in Active Metal Brazing of SiC, J. Cer. Soc. Jap. (Inter. Ed.), 97, 47

Barsoum, 1996, Synthesis and Characterization of a Remarkable Ceramic: Ti3SiC2, J. Amer. Cer. Soc., 79, 1953, 10.1111/j.1151-2916.1996.tb08018.x

Barsoum, 1997, A Progress Report on Ti3SiC2, Ti3GeC2 and the H-Phases, M2BX, J. Mater. Synth. Process., 5, 197

Radhahrishnan, 1999, Synthesis and Stability of Ti3SiC2, J. Alloy. Compounds, 285, 85, 10.1016/S0925-8388(99)00003-1

Du, 2000, Experimental Investigation and Thermodynamic Calculation of the Titanium-Silicon-Carbon System, J. Amer. Cer. Soc., 83, 197, 10.1111/j.1151-2916.2000.tb01170.x

Morozumi, 1985, Bonding Mechanism Between SiC and Thin Foils of Reactive Metals, J. Mater. Sci., 20, 3976, 10.1007/BF00552387

Wakelkamp, 1991, Phase Relations in the Titanium-Silicon-Carbon System, J. Europ. Cer. Soc., 8, 135, 10.1016/0955-2219(91)90067-A

Barsoum, 2000, Comment on ‘Reaction Layers Around SiC Particles in Ti: an Electron Microscopy Study’, Scripta Mater., 43, 285, 10.1016/S1359-6462(00)00404-8

Kool, 1999, Reaction Layers around SiC Particles in Ti: An Electron Microscope Study, Acta Mater., 47, 3105, 10.1016/S1359-6454(99)00151-2

Martineau, 1984, SiC Filament/titanium matrix Composites Regarded as Model Composites. Part 2. Fiber/matrix chemical interactions at high temperatures, J. Mater. Sci., 19, 2749, 10.1007/BF00550832

Ratliff, 1970, Research on Diffusion in Multiphase Ternary Systems

Gottselig, 1990, J. Europ. Ceram. Soc., 6, 153, 10.1016/0955-2219(90)90012-5

Baker, 1994, Mater. Sci Technol., 10, 536, 10.1179/mst.1994.10.6.536

Backhaus-Ricoult, 1989, Ber. Bunsenges. Phys. Chem., 93, 1277, 10.1002/bbpc.19890931127

Mridha, 1996, Mater. Sci Technol., 12, 595, 10.1179/mst.1996.12.7.595

Choi, 1990, J. Mater. Sci., 25, 1975

Abboud, 1989, Mater. Sci. Technol., 5, 725, 10.1179/mst.1989.5.7.725

Goesmann, 1998, J. Mater. Sci.: Mater. in Electronics, 9, 109, 10.1023/A:1008805305059

Barsoum, 1999, HRTEM of Ti4AlN3; or Ti3Al2N2 Revisited, J. Amer. Cer. Soc., 82, 2545, 10.1111/j.1151-2916.1999.tb02117.x

Procopio, 2000, Synthesis of Ti4AlN3 and Phase Equilibria in the Ti-Al-N System, Met. Mater. Trans., 31A, 373

Procopio, 2000, Characterization of Ti4AlN3, Met. Mater. Trans., 31A, 333

C. J. Rawn, M. W. Barsoum, T. El-Raghy, A. Procopio, C. M. Hoffmann and C. Hubbard, “Structure of Ti4AlN3−x- a Layered Mn+1AXn Nitride”, Mater. Res. Bull. in press.

El-Raghy, 1999, Processing and Mechanical Properties of Ti3SiC2: Part I: Reaction Path and Microstructure Evolution, J. Amer. Cer. Soc., 82, 2849, 10.1111/j.1151-2916.1999.tb02166.x

Barsoum, 1997, Layered Machinable Ceramics For High Temperature Applications, Scrip. Met. et. Mater., 36, 535, 10.1016/S1359-6462(96)00418-6

El-Raghy, 1997, Damage Mechanisms Around Hardness Indentations in Ti3SiC2, J. Amer. Cer. Soc., 80, 513, 10.1111/j.1151-2916.1997.tb02861.x

Barsoum, 1997, Oxidation of Ti3SiC2 in Air, J. Electrochem. Soc., 144, 2508, 10.1149/1.1837846

Barsoum, 1998, Comment on “New Ternary Nitride in the Ti-Al-N System”, J. Amer. Cer. Soc., 81, 785, 10.1111/j.1151-2916.1998.tb02413.x

Barsoum, 1997, Fabrication and Characterization of M2SnC (M = Ti, Zr, Hf and Mb), Scrip. Mater., 37, 1583, 10.1016/S1359-6462(97)00288-1

El-Raghy, 1998, Diffusion Kinetics of the Carburization and Silicidation of Ti3SiC2, J. Appl. Phys., 83, 112, 10.1063/1.366707

Low, 1998, Contact Damage Accumulation in Ti3SiC2, J. Amer. Cer. Soc., 81, 225, 10.1111/j.1151-2916.1998.tb02320.x

Farber, 1998, Dislocations and Stacking Faults in Ti3SiC2, J. Amer. Cer. Soc., 81, 1677, 10.1111/j.1151-2916.1998.tb02532.x

Kisi, 1998, Structure and Crystal-Chemistry of Ti3SiC2, J. Phys. Chem. Sol., 59, 1437, 10.1016/S0022-3697(98)00226-1

Myhra, 1998, Crystal-chemistry of the Ti3AlC2 and Ti4AlN3 Layered Carbide/Nitride Phases-Characterization by XPS, J. Phys. Chem. Sol., 59, 1437

Amer, 1998, Raman Spectrum of Ti3SiC2, J. Appl. Phys., 84, 5817, 10.1063/1.368849

Barsoum, 1999, Room Temperature Ductile Carbides, Met. Mater. Trans., 30A, 363, 10.1007/s11661-999-0325-0

Barsoum, 1999, Thermal Properties of Ti3SiC2, J. Phys. Chem. Solids, 60, 429, 10.1016/S0022-3697(98)00313-8

Gamarnik, 1999, Bond Lengths in the Ternary Compounds Ti3SiC2, Ti3Ge2 and Ti2GeC, J. Mater. Science, 34, 169, 10.1023/A:1004415018691

El-Raghy, 1999, Preliminary Report on the Electrochemical Behavior of Ti3SiC2, J. Mat. Sci. Lett., 18, 519, 10.1023/A:1006653806613

Barsoum, 1999, Room Temperature De-Intercalation and Self-Extrusion of Ga from Cr2GaN, Science, 284, 937, 10.1126/science.284.5416.937

El-Raghy, 1999, Growing Metallic Whiskers: An Alternative Interpretation, Science, 285, 1355, 10.1126/science.285.5432.1355i

Farber, 1999, HRTEM Study of a Low-Angle Boundary in Plastically Deformed Ti3SiC2, Phil. Mag. Letters., 79, 163, 10.1080/095008399177390

Finkel, 1999, Low Temperature Dependence of Elastic Properties of Ti3SiC2, J. Appl. Phys., 85, 7123, 10.1063/1.370521

Barsoum, 1999, Dislocations, Kink Banks and Room Temperature Plasticity of Ti3SiC2, Met. Mat. Trans., 30A, 1727, 10.1007/s11661-999-0172-z

Farber, 1999, Isothermal Sections in the Cr-Ga-N System in the 650–1000 °C Temperature Range, J. Mater. Res., 14, 2560, 10.1557/JMR.1999.0343

El-Raghy, 1999, Processing and Mechanical Properties of Ti3SiC2, Part II: Effect of Grain Size and Deformation Temperature, J. Amer. Cer. Soc., 82, 2855, 10.1111/j.1151-2916.1999.tb02167.x

Ho, 1999, Low Temperature Heat Capacity of Ti3SiC2, J. Appl. Phys., 85, 7970, 10.1063/1.370618

Ho, 1999, Low Temperature Heat Capacities of Ti3Al1.1C1.8, Ti4AlN3 and Ti3SiC2, J. Appl. Phys., 86, 3609, 10.1063/1.371267

Farber, 1999, HRTEM of Some Tin+1AXn Compounds (n = 1,2; A = Al or Si; X = C or N), J. Appl. Phys., 86, 2543, 10.1063/1.371089

Barsoum, 1999, The Topotaxial Transformation of Ti3SiC2 To Form a Partially Ordered Cubic TiC0.67 Phase by the Diffusion of Si into Molten Cryolite, J. Electrochem. Soc., 146, 3919, 10.1149/1.1392573

Finkel, 2000, Low Temperature Dependencies of the Elastic Properties of Ti3Al1.1C1.8, Ti4AlN3 and Ti3SiC2, J. Appl. Phys., 87, 1701, 10.1063/1.372080

El-Raghy, 2000, Effect of Grain Size on Friction and Wear Behavior of Ti3SiC2, Wear, 238, 125, 10.1016/S0043-1648(99)00348-8

Tzenov, 2000, Influence of Small Amounts of Fe, and V on the Synthesis and Stability of Ti3SiC2, J. Europ. Cer. Soc., 20, 801, 10.1016/S0955-2219(99)00166-1

Radovic, 2000, Tensile Properties of Ti3SiC2 in the 25–1300 °C Temperature Range, Acta Mater., 48, 453, 10.1016/S1359-6454(99)00351-1

Gilbert, 2000, Fatigue-Crack Growth and Fracture Properties of Coarse and Fine-Grained Ti3SiC2, Scripta Mater., 42, 761, 10.1016/S1359-6462(99)00427-3

Tzenov, 2000, Synthesis and Characterization of Ti3AlC1.8, J. Amer. Cer. Soc., 83, 825, 10.1111/j.1151-2916.2000.tb01281.x

Barsoum, 2000, Processing and Characterization of Ti2AlC, Ti2AlN and Ti2AlC0.5N0.5, Met. Mater. Trans., 31A, 1857, 10.1007/s11661-006-0243-3

Barsoum, 2000, Thermal Properties of Ti4AlN3, J. Appl. Phys., 87, 8407, 10.1063/1.373555

T. El-Raghy, S. Chakraborty and M. W. Barsoum, “Synthesis and Characterization of Hf2PbC, Zr2PbC and M2SnC (M = Ti, Hf, Nb or Zr)”, J. Europ. Cer. Soc. in press.

T. El-Raghy, M. W. Barsoum and M. Sika, “Reaction of Al with Ti3SiC2 in the 800–1000 °C Temperature range”, Mater Sci. Eng. A, in press.

Yoo, 2000, Ti3SiC2 Has Negligible Thermopower, Nature, 407, 581, 10.1038/35036686

M. W. Barsoum, H.-I. Yoo, I. K. Polushina, V. Yu. Rud', Yu. V. Rud' and T. El-Raghy, “Electrical Conductivity, Thermopower and Hall Effect of Ti3AlC2, Ti4AlN3 and Ti3SiC2”, Phys. Rev. B, in press.

M. W. Barsoum, T. El-Raghy, W. D. Porter, H. Wang, J. C. Ho and S. Chakraborty, “Thermal Properties of Nb2SnC”, J. Appl. Phys., in press.

M. W. Barsoum, T. El-Raghy, C. Rawn, W. D. Porter and H. Wang, “Electrical and Thermal Properties of Ti2AlC”, Submitted for publication.

Travaglini, 2000

M. Radovic, M. W. Barsoum, T. El-Raghy and S. Wiederhorn, “Tensile Creep of Fine-Grained Ti3SiC2 in the 25–1200 °C Temperature Range”, Submitted for publication.

M. Radovic, M. W. Barsoum, T. El-Raghy and S. Wiederhorn, “Tensile Properties of” “Coarse-Grained Ti3SiC2 in the 25–1200 °C Temperature Range”, Submitted for publication.

M. W. Barsoum, “Oxidation of Tin+1AlXn where n = 1–3 and X is C, N, Part I: Model”, Submitted for publication.

M. W. Barsoum, M. Ali and T. El-Raghy, “Oxidation of TiN+1AlXN where n = 1–3 and X” “is C, N, Part II: Oxidation of Ti2AlC, Ti2AlN and Ti2AlC0.5N0.5”, Submitted for publication.

N. Tzenov, A. Procopio, T. El-Raghy and M. W. Barsoum, “Oxidation of TiN+1AlXN” “where n = 1–3 and X is C, N, Part III: Oxidation of Ti3AlC2 and Ti4AlC3”. Submitted for publication.

M. Amer, T. El-Raghy, M. W. Barsoum, “Raman Spectra of Ti2AlN and Ti4AlN3”, Unpublished results.

M. W. Barsoum and T. El-Raghy, “Process for Making a Dense Ceramic Work-Piece” Patent #5,882,561.

M. W. Barsoum, T. El-Raghy, D. Brodkin, A. Zavaliangos and S. Kalidindi, “Synthesis of 312 Compounds and Composites Thereof”, Patent # 5,942,455.

M. W. Barsoum and T. El-Raghy, “Surface Modification of 312 and Related Materials”, Patent #6,013,322.

Schuster, 1984, The Ternary System Ti-Al-N, J. Solid. St. Chem., 53, 260, 10.1016/0022-4596(84)90100-2

Cenzual, 1991, Inorganic Structure Types with Revised Space Groups, Acta Crystallogr., B47, 433, 10.1107/S0108768191000903

Lee, 1997, New Ternary Nitride in the. Ti-Al-N System, J. Amer. Cer. Soc., 80, 604, 10.1111/j.1151-2916.1997.tb02874.x

Shechtman, 1994, FCC Titanium in Ti-Al Multilayers, Mater. Lett., 20, 10, 10.1016/0167-577X(94)90039-6

Tepper, 1997, FCC Titanium in Ti/Ag multilayers, Mater. Lett., 33, 181, 10.1016/S0167-577X(97)00095-5

Tepper, 1998, Allotropic Phase Formation in Ti/Zr Multilayers, Mater. Lett., 35, 100, 10.1016/S0167-577X(97)00231-0

Dregia, 1998, Polymorphic Phase Stability in Thin Multilayers, Scripta Mater., 39, 217, 10.1016/S1359-6462(98)00144-4

Banerjee, 1996, Dimensionally-Induced Structural Transformations in Ti-Al multilayers, Phys. Rev. Lett., 76, 3778, 10.1103/PhysRevLett.76.3778

Van Heerden, 1996, The Formation of FCC Titanium in Ti-Al Multilayers, Acta Mater., 44, 297, 10.1016/1359-6454(95)00159-5

Cottrell, 1995

Pietzka, 1996, Phase Equilibria in the Quaternary System Ti-Al-C-N, J. Amer. Cer. Soc., 79, 2321, 10.1111/j.1151-2916.1996.tb08979.x

Nowotny, 1982, Structural Chemistry of Complex Carbides and Related Compounds, J. Solid. St. Chem., 44, 126, 10.1016/0022-4596(82)90409-1

Beckmann, 1970

Kephart, 1998, Ternary Compounds and Phase Equilibria in Ti-Ge-C and Ti-Ge-B, J. Electrochem. Soc., 145, 3253, 10.1149/1.1838794

Calais, 1977, Band Structure of Transition Metal Compounds, Adv. Phys., 26, 847, 10.1080/00018737700101473

Schwarz, 1987, Band Structure and Chemical Bonding in Transition Metal Carbides and Nitrides, 13, 211

Neckel, 1990, Electronic Structure of Stoichiometric and Non- Stoichiometric TiC and TiN, 485

Lye, 1966, Optical Properties and Band Structure of TiC, Phys. Rev., 147, 622, 10.1103/PhysRev.147.622

Medvedeva, 1998, Electronic Properties of Ti3SiC2-Based Solid Solutions, Phys. Rev. B, 58, 16042, 10.1103/PhysRevB.58.16042

Medvedeva, 1998, Electronic Structure and Chemical Bonding in Hexagonal Ti, Zr and Vanadium Silicocarbides, Russ. J. Inorgan. Chem., 43, 398

Ivanovskii, 1999, Electronic Structure of Hexagonal Ti3AlC2 and Ti3AlN2, Mendeleev Commun., 36, 10.1070/MC1999v009n01ABEH001039

Sun, 1999, Ab initio calculation of Ti3SiC2, Phys. Review B, 60, 1441, 10.1103/PhysRevB.60.1441

Zhou, 2000, Electronic Structure and Bonding Properties of Layered Machinable Ti2AlC and Ti2AlN, Phys. Rev. B, 61, 12570, 10.1103/PhysRevB.61.12570

Zhou, 2000, Electronic Structure and Chemical Bonding of Ti3Ge2, J. Mater. Chem., 10, 343, 10.1039/a906865a

Christensen, 1978, Temperature Factor Parameters of Some Transition Metal Carbides and Nitrides by Single Crystal X-ray and Neutron Diffraction, Acta. Chem. Scand., A32, 89, 10.3891/acta.chem.scand.32a-0089

Samsonov, 1964

MacGillavry, 1962, Vol. III

Toth, 1971

Collings, 1971, Magnetic Susceptibility and Low-temperature Specific Heat Studies of Ti, Zr, and Hf, Phys. Rev. B, 4, 349, 10.1103/PhysRevB.4.349

Electronic Structures Database

Chase, 1985, JANAF Thermodynamic Tables, J. Phys. Chem. Ref. Data, 14

Sambasivan, 1990

Modine, 1989, Electrical Properties of Transition Carbides of Group IV, Phys. Rev. B, 40, 9558, 10.1103/PhysRevB.40.9558

Shen, 1965, Phys. Rev. Lett., 14, 1025, 10.1103/PhysRevLett.14.1025

Pierson, 1996

Taylor, 1961, Thermal Conductivity of TiC at High Temperatures, J. Amer. Cer. Soc., 44, 525, 10.1111/j.1151-2916.1961.tb13718.x

Lengauer, 1995, Solid State Properties of Group IVb Carbonitrides, J. Alloys Compounds, 217, 137, 10.1016/0925-8388(94)01315-9

Taylor, 1962, Thermal Conductivity of ZrC at High Temperatures, J. Amer. Cer. Soc., 45, 345

Williams, 1971, Transition-Metal Carbides, 6, 57

Radosevich, 1969, Phonon Scattering by Conduction Electrons and by Lattice Vacancies in Carbides of the Transition Metals, Phys. Rev., 188, 770, 10.1103/PhysRev.188.770

Keppens, 1998, Localized vibrational modes in metallic solids, Nature, 395, 876, 10.1038/27625

Sales, 1999, Atomic Displacement Parameters and the Lattice Thermal Conductivity of Clatharate Thermoelectric Compounds, J. Solid State Chem., 146, 528, 10.1006/jssc.1999.8354

Li, 1999, Synthesis of Ti3SiC2 Polycrystals by Hot Isostatic Pressing of Elemental Powders, J. Mater. Sci. Lett., 18, 1595, 10.1023/A:1006664416845

Hirano, 1990, Electrical Resistivites of Single-Crystalline Transition-Metal Disilicides, J. Appl. Phys., 68, 627, 10.1063/1.346790

Berlincourt, 1959, Hall Effect, Resistivity and Magnetoresistivity of Th, U, Zr, Ti and Nb, Phys. Rev., 114, 969, 10.1103/PhysRev.114.969

Collings, 1974, Anomalous Electrical Resistivity, bcc Phase Stability and Superconductivity in Ti-V Alloys, Phys. Rev. B, 9, 3989, 10.1103/PhysRevB.9.3989

Scovil, 1957, The Hall Effect in Ti, Phys. Rev., 107, 1513, 10.1103/PhysRev.107.1513

Willams, 1964, Phys. Rev. A, 135, 505, 10.1103/PhysRev.135.A505

Worner, 1951, Thermoelectric Properties of Ti with Special Reference to the Allotropic Transformation, Australian J. of Scientific Instrum., 4, 62

Piper, 1962, Hall Effect in Single Crystal TiC, J. Appl. Phys., 33, 2394, 10.1063/1.1728972

Golikova, 1967, Hall Effect in TiC at High Temperatures, Soviet Physics-Semiconductors, 1, 236

Onodera, 1999, Static Compression of Ti3SiC2 to 61GPa, Appl. Phys. Letters, 74, 3782, 10.1063/1.124178

Chokshi, 1993, Mat. Sci. and Eng., R10, 237, 10.1016/0927-796X(93)90009-R

Langdon, 1990

Wakai, 1989, Jap. J. Appl. Phys., 2, 57

Xue, 1996, Superplastic Alumina at Temperatures below 1300 °C Using Charge Compensating Dopants, J. Am. Ceram. Soc., 79, 233, 10.1111/j.1151-2916.1996.tb07903.x

Nieh, 1988, Superplastic Properties of a Fine-grained Yttria-Stabilized Tetragonal Polycrystal of Zirconia, Script. Met., 22, 1297, 10.1016/S0036-9748(88)80150-9

P. Finkel, M. W. Barsoum and T. El-Raghy, “Acoustic Emission and Damage Tolerance of Ti3SiC2 under Compression”, Submitted for pub.

Zhou, 1999, Microstructure and Mechanism of Damage Tolerance for Ti3SiC2 Bulk Ceramics, Material Research Innovations, 2, 360, 10.1007/s100190050114

Low, 1998, Vickers Contact Damage of Micro-layered Ti3SiC2, J. Europ. Cer. Soc., 18, 709, 10.1016/S0955-2219(97)00201-X

El-Raghy, 1997

Cook, 1985, Microstructure-Strength Properties in Ceramics: I Effect of Crack Size on Toughness, J. Amer. Ceram Soc., 68, 604, 10.1111/j.1151-2916.1985.tb16163.x

Petrenko, 1999

Myhra, 1999, Ti3SiC2-A Layered Ceramic Exhibiting Ultra-Low Friction, Materials Letters, 39, 6, 10.1016/S0167-577X(98)00206-7

Crossley, 1999, Ultra-low Friction for a Layered Carbide Derived Ceramic, Ti3SiC2, Investigated by Lateral Force Microscopy, J. Phys. D: Appl. Phys., 32, 632, 10.1088/0022-3727/32/6/006

Hollox, 1966, Plastic Behavior of TiC, J. Appl. Phys., 37, 818, 10.1063/1.1708264

Orowan, 1942, A Type of Plastic Deformation New In Metals, Nature, 149, 463, 10.1038/149643a0

Hess, 1949, Structure and Nature of Kink Bands in Zinc, Trans. AIME, 185, 599

Tapetado, 1974, Phil. Mag., 30, 515, 10.1080/14786439808206577

Patterson, 1966, Geolg. Soc. Amer. Bull., 77, 343, 10.1130/0016-7606(1966)77[343:EDAFIP]2.0.CO;2

Mugge, 1898, Neues Jarrb. f. Miner., 1, 71

Gay, 1974, Tectonphysics, 21, 287, 10.1016/0040-1951(74)90056-0

Honea, 1976, Tectonphysics, 30, 197, 10.1016/0040-1951(76)90187-6

Robertson, 1980, J. Polymer Sci., A-27, 1315

DeTeresa, 1988, J. Mater. Sci., 23, 1886, 10.1007/BF01115735

Zaukelies, 1962, J. Appl. Phys, 33, 2797, 10.1063/1.1702552

Attenburrow, 1979, J. Mater. Sci., 14, 2679, 10.1007/BF00610639

Keller, 1966, J. Mater. Sci., 1, 389, 10.1007/BF00549938

Keith, 1968, Forest Prod. J., 18, 67

Hathorne, 1975, J. Mater. Sci., 10, 41, 10.1007/BF00541030

Jones, 1971, Carbon, 9, 645, 10.1016/0008-6223(71)90087-X

Gupta, 1994, Acta. Mater., 42, 781, 10.1016/0956-7151(94)90274-7

Weaver, 1975, J. Mater. Sci., 10, 1323, 10.1007/BF00540822

Argon, 1972, Treatise Mater. Sci. Technol., 1, 79, 10.1016/B978-0-12-341801-2.50007-2

Edwards, 1971, Strain Softening in Powder Metallurgy Zinc, Met. Trans., 2, 2955, 10.1007/BF02813287

Frank, 1952, On the Theory of Kinking, 65, 811

Stroh, 1954, 223, 404

Suematsu, 1991, Kinking and Cracking Caused by Slip in Single Crystals of SiC, J. Amer. Cer. Soc., 74, 173, 10.1111/j.1151-2916.1991.tb07314.x

Chakraborty, 1998

Rudy, 1969, Ternary Phase Equilibria in Transition Metal-B-C-Si Systems, Part V

Sarian, 1968, Diffusion of C in TiC, J. Appl. Phys., 39, 3305, 10.1063/1.1656774

Eremov, 1967, Poroshk. Met. Akad. Nauk. SSR., 7, 65

Cockeram, 1995, Met. Mater. Trans. A, 26A, 777, 10.1007/BF02649076

Hung, 1980, J. Appl. Phys., 54, 5076, 10.1063/1.332781

Revesz, 1983, J. Appl. Phys., 54, 2114, 10.1063/1.332265