The Hall effect in selectively doped strained-layer Ge-Ge1−xSix superlattices superlattices

Superlattices and Microstructures - Tập 10 - Trang 467-470 - 1991
O.A. Mironov1, O.A. Kuznetsov2, L.K. Orlov2, R.A. Rubtsova2, A.L. Chernov2, S.V. Chistyakov, M. Oszwaldowski3, B.A. Aronzon4, N.K. Chumakov4
1Institute of Radiophysics and Electronics, UkrSSR Academy of Sciences, Kharkov 310085, USSR
2Physical-Technical Research Institute of Gorky University, Gorky, 603600, USSR
3Technical University of Poznan, 60-965 Poznan, Poland
4Kurchatov Institute of Atomic Energy, Moscow 121182, USSR

Tài liệu tham khảo

Manasevit, 1982, Appl. Phys. Lett., 41, 464, 10.1063/1.93533 Abstreiter, 1985, Phys. Rev. Lett., 54, 2441, 10.1103/PhysRevLett.54.2441 Orlov, 1989, Sov. Tech. Phys. Lett., 15, 77 Orlov, 1990, Sov. Phys. Solid State, 32, 1933 Wagner, 1989, Appl. Phys. Lett., 54, 66, 10.1063/1.100837
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Thông tin xuất bản

Superlattices and Microstructures

Tập 10

467-470

Thông tin tác giả