The Effects of Growth Conditions in Dislocation Density in SiC Epi-Layers Produced by the Sublimation Epitaxy Technique

Materials Science Forum - Tập 264-268 - Trang 147-150
A. Kakanakova–Georgieva1, M. F. MacMillan2, Shigehiro Nishino3, Rositza Yakimova1, Erik Janzén1
1Linköping University,
2Dow Corning Corporation
3Dong-eui University

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