The Dependence of Cd Diffusion and Electrical Conductivity in CdS on Cd Partial Pressure and Temperature

Physica Status Solidi (B): Basic Research - Tập 36 Số 2 - Trang 705-716 - 1969
D. Shaw1, R. C. Whelan2
1Physics Department, The University, Hull
2Metallurgy Department, University College, Cardiff

Tóm tắt

AbstractThe diffusion coefficient of Cd in undoped single crystal CdS has been measured at 850 °C as a function of Cd pressure, pCd, by a radiotracer method. The electrical conductivity of similar CdS samples has also been measured as a function of pCd in the temperature range 660 to 950 °C. It is concluded that the defects V″Cd and Cd are responsible for Cd diffusion at 850 °C and that a satisfactory account of the results can be given in terms of Cd interstitials and vacancies plus a residual shallow foreign donor. A model for the defect structure in CdS at 850 °C is presented in terms of Cd vacancies and interstitials.

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Tài liệu tham khảo

Woodbury H. H., 1967, II‐VI Semiconducting Compounds, 244

R. C.WhelanandD.Shaw II‐VI Semiconducting Compounds p.451.

10.1016/0022-3697(68)90179-0

R. A.Reynolds Ph.D. Thesis Stanford University 1965.

Borsenberger P. M., 1967, II‐VI Semiconducting Compounds, 439

10.1063/1.1744494

10.1103/PhysRev.134.A492

van der Pauw L. J., 1958, Philips Res. Rep., 13, 1

van Gool W., 1963, Proc. Kon. Nederl. Akad. Wetensch., 66, 299

Von Braune H., 1951, Z. Naturf., 6, 32, 10.1515/zna-1951-0105

Von Braune H., 1952, Z. Naturf., 7, 486, 10.1515/zna-1952-0707

Washburn E. W., 1928, International Critical Tables

Kröger F. A., 1953, Z. phys. Chem., 203, 1, 10.1515/zpch-1954-0102

10.1002/pssb.19680290115

10.1063/1.1698631

Shewmon P. G., 1963, Diffusion in Solids, 7

10.1063/1.1726079

10.1016/0022-3697(64)90005-8

10.1002/pssb.19650120103

Devlin S. S., 1967, Physics and Chemistry of II‐VI Compounds

De Nobel D., 1959, Philips Res. Rep., 14, 430

10.1002/pssb.19680290132

Brouwer G., 1954, Philips Res. Rep., 9, 366

Aigrain P., 1961, Tables of Constants and Numerical Data

Shewmon P. G., 1963, Diffusion in Solids

Shewmon P. G., 1963, Diffusion in Solids

10.1063/1.1776996

10.1016/0031-8914(65)90077-7

10.1103/PhysRev.105.843

10.1103/PhysRev.102.915

Boltaks B. I., 1963, Diffusion in Semiconductors, 112

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Physica Status Solidi (B): Basic Research

Tập 36 Số 2

705-716

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