The Chemistry of Oxygen in Silicon
Tóm tắt
Some of the key issues involving the chemistry of oxygen in silicon crystals are presented in this paper. The incorporation of oxygen into Czochralski-grown ingots from melt contact with silica crucibles is described in the context of the Si-SiO2 phase diagram. The techniques for characterizing oxygen in silicon are reviewed, with an emphasis on the use of secondary ion mass spectrometry (SIMS) and 18O isotope substitution. The intrinsic diffusivity and solubility of oxygen in silicon derived from these SIMS measurements are compared to similar results from other techniques as well as related extrinsic behavior of oxygen. Aggregation phenomena involving oxygen, including thermal donor formation and precipitation are discussed. Finally, the recent progress in understanding internal gettering and shear stress are summarized.
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