Temperature-programmed evolution of low-energy, rare-gas ions implanted in Si(100)

Surface Science - Tập 330 - Trang L633-L638 - 1995
Mark R Tesauro1, Grant Underwood1, B.K Kellerman1,2, Alan Campion1
1Science and Technology Center for the Synthesis, Growth and Analysis of Electronic Materials, The University of Texas at Austin, Austin, TX 78712-1167, USA
2Sandia National Laboratories, Albuquerque, NM, USA

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