Temperature Measurement of Power Semiconductor Devices by Thermo-Sensitive Electrical Parameters—A Review

IEEE Transactions on Power Electronics - Tập 27 Số 6 - Trang 3081-3092 - 2012
Yvan Avenas1, Laurent Dupont2, Zoubir Khatir2
1Grenoble Electr. Eng. Lab., Univ. de Grenoble, St. Martin d'Hères, France
2Lab. of New Technol., French Inst. of Sci. & Technol. for Transp., Dev. & Networks, Versailles, France

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Tài liệu tham khảo

duong, 1995, Short circuit behaviour for PT and NPT IGBT devices—Protection against explosion of the case by fuse, Proc Eur Conf Power Electron Appl, 249

10.1016/S0026-2714(97)00150-9

nowak, 2008, Measurement of temperature sensitive parameter characteristics of semiconductor silicon and siliconcarbide power devices, Proc 13th Power Electron Motion Control Conf, 84

10.1016/j.microrel.2010.07.102

sofia, 1997, Electrical measurement using semiconductors, Electron Cool, 3, 22

10.1109/SEMTHE.1988.10589

10.1109/63.654955

10.1109/PESC.1982.7072436

10.1109/TPEL.2010.2049864

10.1109/TPEL.2010.2040634

10.1109/IECON.2009.5415122

moumen, 2009, Indirect thermal measurement on SIC JFET transistors, Proc Eur Conf Power Electron Appl, 1

luo, 2002, Temperature dependence of R<formula formulatype="inline"><tex Notation="TeX">$_{\rm on,sp}$</tex></formula> in silicon carbide and GaAs Schottky diode, Proc 40th Annu Reliabil Phys Symp, 425

10.4028/www.scientific.net/AMR.324.411

10.1109/IRPS.1975.362688

bergogne, 2009, Electro-thermal behaviour of a SiC JFET stressed by lightning-induced overvoltages, Proc Eur Conf Power Electron Appl, 1

10.1016/S0026-2714(99)00163-8

feng, 2010, Determination of channel temperature of AlGaN/GaN HEMT by electrical method, Proc 21st Annu IEEE Semicond Therm Meas Manag Symp, 165

10.1109/IAS.1994.377584

10.1109/STHERM.2004.1291304

10.1016/S0026-2714(99)00250-4

10.1109/TPEL.2006.886651

10.1016/j.microrel.2007.07.099

yun, 1999, Static and dynamic thermal characteristics of IGBT power modules, Proc 11th Int Symp Power Semicond Devices ICs, 37

10.1016/S0026-2714(97)00154-6

schmidt, 2009, Using the chip as a temperature sensor&#x2014;The influence of steep lateral temperature gradients on the Vce(T)-measurement, Proc Eur Conf Power Electron Appl, 1

10.1109/TPEL.2010.2040632

10.1109/TPEL.2009.2029105

10.1109/PESC.2000.880543

10.1109/PESC.2006.1711878

10.1109/ECCE.2011.6064128

10.1109/EPEPEMC.2008.4635246

10.1109/ASDAM.2008.4743361

10.1109/IEMDC.1997.604296

0

10.1016/j.microrel.2006.07.058

kuhn, 2009, On-line junction temperature measurement of IGBTs based on temperature sensitive electrical parameters, Proc Eur Conf Power Electron Appl, 1

10.1016/j.microrel.2007.07.008

10.1016/j.microrel.2010.07.135

brekel, 2009, Time resolved in situ Tvj measurements of 6.5kV IGBTs during inverter operation, Proc PCIM Eur, 806

10.1109/95.623028

10.1016/S0026-2692(03)00205-2

10.1016/S0026-2714(98)00134-6

10.1016/S0038-1101(01)00247-7

10.1016/j.sse.2004.05.077

10.1109/ISPSD.2009.5158036

10.1109/ISPSD.2011.5890806

10.1109/TPEL.2009.2033188

avenas, 2012, Comparison of junction temperature evaluations in a power IGBTs module using an IR camera and three thermo-sensitive electrical parameters, presented at the Appl Power Electron Conf Expo

10.1109/ISPSD.1999.764095

10.1109/RME.2006.1689891

werber, 2008, Interpretation of laser absorption measurements on 4 H-SiC bipolar diodes by numerical simulation, Proc Int Conf Simul Semicond Process Devices, 89

10.1109/TCAD.2003.819895

10.1109/MIEL.2002.1003144

10.1109/TPEL.2009.2036850

ayadi, 2010, Electro-thermal simulation of a three phase inverter with cooling system, Model Simul Syst, 1, 163

10.1109/ISPSD.2006.1666120

kim, 1998, On-line estimation of IGBT junction temperature using on-state voltage drop, Proc 1998 IEEE Ind Appl Conf, 853

10.1109/PEDS.2007.4487683

10.1109/IAS.2003.1257817

10.1016/j.microrel.2006.07.078

10.1049/cp:20060147

10.1109/ISIE.1999.798675

10.1109/PRIMEASIA.2010.5604898

10.1109/IPEC.2010.5543289