Temperature Dependent Poly Crystalline Zinc Oxide Thin Film Transistor Characteristics

E. Fortunato et al., Recent advances in ZnO transparent thin film transistors. Thin Solid Films 487(1–2), 205–211 (2005)

K. Kandpal, N. Gupta, Perspective of zinc oxide based thin film transistors: a comprehensive review. Microelectron. Int. 35(1), 52–63 (2018)

S. Oh et al., Performance improvements of ZnO thin film transistors with reduced graphene oxide-embedded channel layers. J. Alloys Compd. 777, 1367–1374 (2019)

R.A. Street, Thin-film transistors. Adv. Mater. 21(20), 2007–2022 (2009)

Z. Yu-Ming, H. Yi-Gang, L. Ai-Xia, W. Qing, Simulation of grain boundary effect on characteristics of ZnO thin film transistor by considering the location and orientation of grain boundary. Chin. Phys. B 18(9), 3966–3969 (2009)

F.M. Hossain et al., Modeling and simulation of polycrystalline ZnO thin-film transistors. J. Appl. Phys. 94(12), 7768–7777 (2003)

A. Zhang, X.-R. Zhao, L.-B. Duan, J.-M. Liu, J.-L. Zhao, Numerical study on the dependence of ZnO thin-film transistor characteristics on grain boundary position. Chin. Phys. B 20(5), 057201 (2011)

M.A. Dominguez, S. Alcantara, S. Soto, Physically-based simulation of zinc oxide thin-film transistors: Contact resistance contribution on density of states. Solid. State. Electron. 120, 41–46 (2016)

G. Hai-Xia, H. Rong, Y. Yin-Tang, Modeling of polycrystalline ZnO thin-film transistors with a consideration of the deep and tail states. Chin. Phys. B 20(11), 116803 (2011)

M. Estrada et al., Temperature dependence of the electrical characteristics of low-temperature processed zinc oxide thin film transistors. Thin Solid Films 573, 18–21 (2014)

L. Zhang et al., Enhanced performances of ZnO-TFT by improving surface properties of channel layer. Solid State Commun. 146(9–10), 387–390 (2008)

C.E. Kim et al., Density-of-states modeling of solution-processed InGaZnO thin-film transistors. IEEE Electron Device Lett. 31(10), 1131–1133 (2010)

SILVACO ATLAS, Atlas User’s Manual. 408, 567–1000, 2014.

S.M. Sze, K.K. Ng, Physics of Semiconductor Devices (Wiley, Hoboken, 2006).

M. Adaika, A. Meftah, N. Sengouga, M. Henini, Numerical simulation of bias and photo stress on indium–gallium–zinc-oxide thin film transistors. Vacuum 120, 59–67 (2015)

D. R. Askeland, P. P. Phulé, W. J. Wright, and D. K. Bhattacharya, The science and engineering of materials, 2003.

C. Chen and J. Kanicki, Influence of the density of states and series resistance on the field-effect activation energy in a-Si: H TFT. MRS Online Proc. Libr. Arch., 424, 1996.

M.I. Medina-Montes et al., Effect of depth of traps in ZnO polycrystalline thin films on ZnO-TFTs performance. Solid. State. Electron. 123, 119–123 (2016)