Te-rich liquid-phase epitaxy of Hg1−xCdxTe

B. Pelliciari1
1CEA - LETI - LIR, 85 X - 38041, Grenoble Cedex, France

Tài liệu tham khảo

Jordan, 1970, Trans. Met. Soc. AIME, 1, 239 Laugier, 1973, Rev. Phys. Appl. Suppl. J. Phys., 8, 259, 10.1051/rphysap:0197300803025900 de Nobel, 1959, Philips Research Reports, 14, 361 Blair, 1961, 12, 393 Harman, 1967, Physics and Chemistry of II-VI Compounds, 767 Ray, 1967, Phys. Stat. Sol., 22, 371, 10.1002/pssb.19670220206 Harman, 1980, J. Electron. Mater., 9, 945, 10.1007/BF02822728 Harman, 1981, J. Electron. Mater., 10, 1069, 10.1007/BF02661192 Harman, 1981, SPIE, 285, 84, 10.1117/12.931994 Mroczkowski, 1981, J. Electrochem. Soc., 128, 655, 10.1149/1.2127476 Wang, 1980, J. Electrochem. Soc., 127, 175, 10.1149/1.2129611 Pelliciari, 1988, J. Crystal Growth, 86, 146, 10.1016/0022-0248(90)90712-T Hsieh, 1980, vol. 3 Yoshikawa, 1985, Fujitsu Sci. Tech. J., 5–21, 494 LETI-LIR: unpublished results. P.S. Nayar, P.B. Ward, P.C. Colter, S.R. Hampton, J.W. Slawinski, L. Fishman, C.M. Callahan, H.R. Vydyanath : I.E.D.M. 84 p 385. Bernardi, 1988, J. Crystal Growth, 87, 365, 10.1016/0022-0248(88)90189-3 Schmit, 1980, Technical Report AFWAL TR-80-4068 Nagahama, 1982, Jap. J. Appl. Phys., 12–21, L 764, 10.1143/JJAP.21.L764 Brice, 1987, Semicond. Sci. Technol., 2, 710, 10.1088/0268-1242/2/11/002 Astles, 1988, J. Cryst. Growth, 91, 1, 10.1016/0022-0248(88)90359-4 Astles, 1992, J. Cryst. Growth, 117, 213, 10.1016/0022-0248(92)90747-7 Zemel, 1987, J. Appl. Phys., 62, 1861, 10.1063/1.339570 Tribolet, 1987, SPIE, 865, 65, 10.1117/12.943547 Nemirovsky, 1982, J. Electron. Mat., 11, 133, 10.1007/BF02654613 Wang, 1991, J. Vac. Sci. Technol., B9, 1740, 10.1116/1.585409 Edwall, 1984, J. Appl. Phys., 55, 1453, 10.1063/1.333400 M. Chu, S. Shin, A.H.B. Vanderwyck, L.O. Bubulac, W.E. Tennant, C.C. Wang : I.E.E.E. 79 p 659. Geibel, 1986, SPIE, 659, 110, 10.1117/12.938546 Wan, 1986, J. Electron. Mater., 15, 1517, 10.1007/BF02655329 Wan, 1987, J. Cryst. Growth, 80, 270, 10.1016/0022-0248(87)90072-8 Shaw, 1983, J. Cryst. Growth, 62, 247, 10.1016/0022-0248(83)90302-0 B. Schaub: Classified communication (1989). Dean, 1987 Lay, 1988, J. Cryst. Growth, 86, 119, 10.1016/0022-0248(90)90708-S Duncan, 1990, 161, 39 Bell, 1985, J. Vac. Sci. Technol., A 3, 112, 10.1116/1.573179 Vydyanath, 1987, J. Electron. Mater., 16, 13, 10.1007/BF02667786 Schmit, 1982, J. Cryst. Growth, 56, 485, 10.1016/0022-0248(82)90468-7 Hansen, 1982, J. Appl. Phys., 53, 7099, 10.1063/1.330018 Pelliciari, 1989, J. Vac. Sci. Technol., A 7, 314, 10.1116/1.576131 Destefanis, 1988, J. Cryst. Growth, 86, 700, 10.1016/0022-0248(90)90798-P Lou, 1984, J. Appl. Phys., 56, 2253, 10.1063/1.334259 Chen, 1985, J. Appl. Phys., 58, 3150, 10.1063/1.335819 Colombo, 1992, SPIE, 1683, 33, 10.1117/12.137777 Rudolph, 1992, J. Cryst. Growth, 118, 204, 10.1016/0022-0248(92)90065-Q Mühlberg, 1990, J. Cryst. Growth, 101, 275, 10.1016/0022-0248(90)90981-P Astles, 1992 Krueger, 1991, 216, 93 Sarusi, 1989, J. Appl. Phys., 65, 672, 10.1063/1.343102 Pelliciari, 1987, SPIE, 865, 22, 10.1117/12.943540 Yasumura, 1992, J. Cryst. Growth, 117, 20, 10.1016/0022-0248(92)90709-R Vydyanath, 1989, SPIE, 1097, 110, 10.1117/12.960380 B. Pelliciari : private communication. W.E. Tennant : I.E.D.M. 83 p 704. Gertner, 1985, J. Cryst. Growth, 72, 462, 10.1016/0022-0248(85)90191-5 Kozlowski, 1990, SPIE, 1308, 202, 10.1117/12.21728 Schmit, 1986, J. Vac. Sci. Technol., A 4, 2141, 10.1116/1.574044 Zanio, 1988, SPIE, 930, 44, 10.1117/12.946626 Ahlgren, 1989, J. Vac. Sci. Technol., A 7, 331, 10.1116/1.576098 Johnson, 1991, 216, 141 Bowers, 1980, I.E.E.E. Trans. Electron. Devices, ED 27, 24, 10.1109/T-ED.1980.19813 Destefanis, 1986, Third International Conf. on Advanced IR Detectors and Systems, 46 D. Amingual : 1991 Proc. Int. Congress on Optical Science and Engineering, The Hague. Destefanis, 1991, Semicond. Sci. Technol., 6, C88, 10.1088/0268-1242/6/12C/017 Chatard, 1992, SPIE, 1735, 62, 10.1117/12.138641 Ziegler, 1992, SPIE, 1735, 151 E.R. Gertner : MRS Proceedings 90 p 357. Kozlowski, 1992, SPIE, 1735, 163, 10.1117/12.138620 Chamonal, 1992, SPIE, 1685 Destifanis, 1992, US MCT Workshop Norton, 1991, Optical Engineering, 30, 1649, 10.1117/12.56001 Krueger, 1991, 216, 93 Tung, 1992, SPIE, 1735, 109, 10.1117/12.138616 Nguyen Duy, 1991, Science et Défense, 432 Beck, 1988 Bouchut, 1991, J. Vac. Sci. Technol., B 9, 1794, 10.1116/1.585801 Harman, 1979, J. Electr. Mater., 8, 191, 10.1007/BF02663272 Zucca, 1988, J. Vac. Sci. Technol., A 6, 2725