Synthesis and micro-structural study of one-dimensional nano-materials

Science China Mathematics - Tập 42 - Trang 429-437 - 1999
Guangwen Zhou1, Ze Zhang1, Dapeng Yu2
1Beijing Laboratory of Electron Microscopy, Center for Condensed Matter Physics, Chinese Academy of Sciences, Beijing, China
2Department of Physics, National Key Laboratory of Mesoscopic Physics, Peking University, Beijing, China

Tóm tắt

Silicon nano-wires (SiNWs) and boron nitride nano-tubules (BN-NTs) were successfully synthesized by excimer laser ablation at high temperature. These one-dimensional nano-materials synthesized by this method have a very high yield, a uniform diameter distribution, and a high purity. Micro-structures of these nano-materials were investigated by transmission electron microscopy (TEM). The SiNWs have a high density of structural defects of microtwin, stacking faults, and low-angle boundary, which are closely related to the formation of SiNWs and the determination of morphology of the nano-wires. BN-NTs are mainly single atomic-layered and the outer surface of tubules is clean without any attachment. The formation of single atomic-layered tubule is attributed to the catalyst effect which makes the axial rate of BN-NTs much higher than the radial growth

Tài liệu tham khảo

Yu, D. P., Lee, C. S., Bello, I. etal., Synthesis of nano-scale silicon wires by excimer laser ablation at high temperature,Solid State Communications, 1998, 105: 403. Yu, D. P., Sun, X. S., Lee, C. S. et al., Synthesis of boron nitride nano-tubes by means of excimer laser ablation at high temperature,Appl. Phys. Lett., 1998, 72: 1966. Wagner, R. S., Ellis, W. C., Vapor-liquid-solid mechanism of single crystal growth,Appl. Phys. Lett., 1964, 4: 89. Boostma, G. A., Gassen, H. J., A quantitative study on the growth of silicon whiskers from silane and germanium whiskers from germane,J. Cryst. Growth, 1971, 10: 223. Givargizov, E. I., Fundamental aspects of VLS growth,J. Cryst. Growth, 1975, 32: 20. Rubio, A., Corkill, J., Cohen, M. L., Theory of graphitic boron nitride nanotubees,Phys. Rev. B, 1994, 49: 5081. Blase, X., Rubio, A., Louie, S, G. et al., Stability and band gap constancy of boron nitride nanotubes,Europhys. Lett., 1994, 28: 335. Bennett, A. I., Longini, R. L., Dendritic growth of germanium crystals,Phys. Rev., 1959, 116: 53. Seidensticker, R. G., Hamilton, D. R., Growth mechanism in germanium dendrites: three twin dendrites, experiments on and models for the entrie interface,J. Appl. Phys., 1963, 34: 3113. Hamilton, D. R., Seidensticker, R. G., Propagation mechanism of germanium dendrics,J. Appl. Phys., 1960, 31: 1165. Loisaeu, A., Williame, F., Demoncy, N. et al., Boron nitride nanotubes with reduced numbers of layers synthesized by ARC discharge,Phys. Rev. Lett., 1996, 76: 4737. Maiti, A., Brabec, C. J., Roland, C. et al., Theory of carbon nanotube growth,Phys. Rev. B, 1995, 52: 14850. Maiti, A., Babec, C. J., Berbholc, J., Kinetics of metal-catalyzed growth of single-walled carbon nanotubes,Phys. Rev. B, 1997, 55: R6097.