Synthesis and characteristics of KTa0.5Nb0.5O3 thin films

Ionics - Tập 20 - Trang 1795-1799 - 2014
Bing Liu1, Xuping Wang1, Yuanyuan Zhang1, Xianshun Lv1, Yuguo Yang1
1New materials Research Institute, Shandong Academy of Sciences, Jinan, China

Tóm tắt

KTa0.5Nb0.5O3 thin films were synthesized via a metal-organic solution. Characteristics were measured, such as X-ray diffraction pattern, surface morphology and roughness, and electric properties. The synthesized films have a (100) preferential growth orientation on Si (100) substrate. The homogeneous microstructure and smooth surface benefit to the good electric properties of the thin films. The current density-voltage characteristic shows an unexpected feature of the transition from linear to nonlinear, which can be explained by the space-charge-limited mode. Dielectric constant and loss of the thin films decrease with the increase of frequency. The decrease of dielectric loss is related to the decrease of net polarization in material. The decrease of dielectric constant can be explained by Debye formula. The phase transition temperature T c is about 102 °C for KTa0.5Nb0.5O3 materials.

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Ionics

Tập 20

1795-1799

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