Surface barrier height in metal-SiC structures of 6H, 4H and 3C polytypes

Materials Science and Engineering B: Solid-State Materials for Advanced Technology - Tập 46 - Trang 236-239 - 1997
A.L. Syrkin1, J.M. Bluet1, G. Bastide1, T. Bretagnon1, A.A. Lebedev2, M.G. Rastegaeva2, N.S. Savkina2, V.E. Chelnokov2
1Groupe d'Etude des Semiconducteurs Université Montpellier II ‘Sciences et Techniques du Languedoc’ ce 074, 34095 Montpellier Cedex 5, France
2Ioffe Physical Technical Institute Russian Academy of Sciences, 26 Polilechnicheskaya Street, 194021 St. Petersburg, Russia

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Materials Science and Engineering B: Solid-State Materials for Advanced Technology

Tập 46

236-239

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