Superior Thermal Conductivity of Single-Layer Graphene

Nano Letters - Tập 8 Số 3 - Trang 902-907 - 2008
Alexander A. Balandin1, Suchismita Ghosh1, Wenzhong Bao1, Irene Calizo1, Desalegne Teweldebrhan1, Feng Miao1, Chun Ning Lau1
1Nano-Device Laboratory, Department of Electrical Engineering, University of California−Riverside, Riverside, California 92521, Materials Science and Engineering Program, Bourns College of Engineering, University of California−Riverside, Riverside, California 92521, Department of Physics and Astronomy, University of California−Riverside, Riverside, California 92521

Tóm tắt

Từ khóa


Tài liệu tham khảo

Novoselov K. S., 2004, Science, 306, 666, 10.1126/science.1102896

Zhang Y. B., 2005, Nature, 438, 201, 10.1038/nature04235

Abanin D. A., 2007, Phys. Rev. Lett., 98, 156801, 10.1103/PhysRevLett.98.156801

Kane C. L., 2005, Phys. Rev. Lett., 95, 226801, 10.1103/PhysRevLett.95.226801

Khveshchenko D. V., 2006, Phys. Rev. B, 74, 161402, 10.1103/PhysRevB.74.161402

Miao F., 2007, Science, 317, 1530, 10.1126/science.1144359

Peres N. M. R., 2006, Phys. Rev. B, 73, 195411, 10.1103/PhysRevB.73.195411

Morozov S. V., 2006, Phys. Rev. Lett., 97, 016801, 10.1103/PhysRevLett.97.016801

Pisana S., 2007, Nat. Mater., 6, 198, 10.1038/nmat1846

Geim A. K., 183, Nat. Mater., 6, 183, 10.1038/nmat1849

Hass J., 2006, Appl. Phys. Lett., 89, 143106, 10.1063/1.2358299

Saito K., 2007, Phys. Rev. B, 76, 115409, 10.1103/PhysRevB.76.115409

Peres N. M. R., 2007, Phys. Rev. B, 76, 073412, 10.1103/PhysRevB.76.073412

Mingo N., 2005, Phys. Rev. Lett., 95, 096105, 10.1103/PhysRevLett.95.096105

Chiu H. Y., 2005, Phys. Rev. Lett., 95, 226101, 10.1103/PhysRevLett.95.226101

Yu C. H., 2005, Nano Lett., 5, 1842, 10.1021/nl051044e

Kim P., 2001, Phys. Rev. Lett., 87, 215502, 10.1103/PhysRevLett.87.215502

Pop E., 2006, Nano Lett., 6, 96, 10.1021/nl052145f

Hone J., 1999, Phys. Rev. B, 59, R2514, 10.1103/PhysRevB.59.R2514

Sukhadolou A. V., 2005, Diamond Relat. Mater., 14, 589, 10.1016/j.diamond.2004.12.002

Berger S., 2000, Phys. Rev. Lett., 84, 4613, 10.1103/PhysRevLett.84.4613

Osman M. A., 2001, Nanotechnology, 12, 21, 10.1088/0957-4484/12/1/305

Cahill D. G., 1990, Rev. Sci. Instrum., 61, 802, 10.1063/1.1141498

Liu W. L., 2006, Appl. Phys. Lett., 89, 171915, 10.1063/1.2364130

Ferrari A. C., 2006, Phys. Rev. Lett., 97, 187401, 10.1103/PhysRevLett.97.187401

Gupta A., 2006, Nano Lett., 6, 2667, 10.1021/nl061420a

Calizo I., 2007, Appl. Phys. Lett., 91, 201904, 10.1063/1.2805024

Calizo I., 2007, Nano Lett, 7, 2645, 10.1021/nl071033g

Calizo I., 2007, Appl. Phys. Lett., 91, 071913, 10.1063/1.2771379

Perichon S., 1999, J. Appl. Phys., 86, 4700, 10.1063/1.371424

Lysenko V., 1999, J. Appl. Phys., 86, 6841, 10.1063/1.371760

Klemens P. G., 1994, Carbon, 32, 735, 10.1016/0008-6223(94)90096-5

Mounet N., 2005, Phys. Rev. B, 71, 205214, 10.1103/PhysRevB.71.205214

Che J., 2000, Nanotechnology, 11, 65, 10.1088/0957-4484/11/2/305

Balandin A., 1998, Phys. Rev. B, 58, 1544, 10.1103/PhysRevB.58.1544

Balandin A., 1998, J. Appl. Phys., 84, 6149, 10.1063/1.368928

Zou J., 2001, J. Appl. Phys., 89, 2932, 10.1063/1.1345515

Pokatilov E. P., 2005, Phys. Rev. B, 72, 113311, 10.1103/PhysRevB.72.113311

Pokatilov E. P., 2005, Superlattices Microstruct., 38, 168, 10.1016/j.spmi.2005.06.001

Shamsa M., 2006, Appl. Phys. Lett., 89, 161921, 10.1063/1.2362601

Tobin M. C., 1971, Laser Raman Spectroscopy

Sushchinskii M. M., 1969, Raman Spectra of Molecules and Crystals

McCreery R. L., 2000, Raman Spectroscopy for Chemical Analysis, 10.1002/0471721646

Meyer J. C., 2007, Nat. Lett., 446, 60, 10.1038/nature05545

Galeener F. L., 1979, Phys. Rev. B, 19, 4292, 10.1103/PhysRevB.19.4292

Kuball M., 2003, Appl. Phys. Lett., 82, 124, 10.1063/1.1534935

The inclusion of the reflection coefficientRHof HOPG andRSiof Si trench bottom will result in multiplication of the final expression for the power on graphene by the factor (1 +RSi)(1 – RH), which is about 0.94 for the characteristic values of the coefficients for our samples. The details of the derivation will be reported elsewhere.