Superacid-Treated Silicon Surfaces: Extending the Limit of Carrier Lifetime for Photovoltaic Applications

kho, 0, Optimization and characterization of ONO

10.1063/1.2985906

10.3791/53614

10.1149/2.003202jss

10.1103/PhysRevLett.57.249

trupke, 0, Effective excess carrier lifetimes exceeding 100 ms in float zone silicon determined from photoluminescence, Proc 19th Eur Photovolt Sol Energy Conf, 758

10.1063/1.4907804

10.1002/pssa.201600360

10.1002/pssr.201600080

10.1063/1.357521

10.1002/adma.201104795

10.1109/JPHOTOV.2017.2713411

10.1021/acsenergylett.7b00015

10.1038/srep35091

10.1063/1.4827303

10.1016/j.solmat.2014.05.022

10.1016/j.egypro.2015.07.047

10.1063/1.4976949

10.1021/acsami.6b07822

10.1063/1.4954010

10.1109/JPHOTOV.2016.2618608

10.1149/1.2221191

10.1109/JPHOTOV.2012.2215014

hiroyuki, 1993, Study of Si Etch rate in various composition of SC1 solution, Jpn J Appl Phys, 32

10.1016/j.solmat.2013.06.018

herasimenka, 2013, Surface passivation of n-type c-Si wafers by a-Si/SiO2/SiNx stack with <1?cm/s effective surface recombination velocity, Appl Phys Lett, 103

kern, 2007, RCA Critical Cleaning Process

10.1103/PhysRevB.86.165202

10.1038/nenergy.2017.32

10.1002/pssr.201600307

10.1002/pssr.201105183

10.1021/acs.jpclett.5b02686

10.1002/pip.583

10.1002/pssr.201600408

10.1063/1.4967914

10.1109/JPHOTOV.2014.2367912

10.1149/1.2086825

10.1002/pip.2928

10.1002/pssr.201600448

10.1063/1.373878

10.1063/1.2234747

10.1063/1.1432476

10.1149/1.2095849

10.1063/1.4983024

10.1109/66.778192

10.1063/1.4886595

10.1109/JPHOTOV.2013.2284375