Super resolution optical measurements of nanodefects on Si wafer surface using infrared standing evanescent wave

Hansen, 2006, Dimensional Micro and Nano Metrology, Annals of CIRP, 55, 721, 10.1016/j.cirp.2006.10.005 Brinksmeier, 2010, Ultra-Precision Grinding, Annals of CIRP, 59, 652, 10.1016/j.cirp.2010.05.001 Fabry, 1999, Novel Method of TXRF Analysis for Silicon Wafer Surface Inspection, Fresenius Journal of Analytical Chemistry, 363, 98, 10.1007/s002160051145 Takami, 1997, Defect Inspection of Wafers by Laser Scattering, Materials Science and Engineering, B44, 181, 10.1016/S0921-5107(96)01745-X Hocken, 2005, Optical Metrology of Surfaces, Annals of CIRP, 54, 169, 10.1016/S0007-8506(07)60025-0 Jiang, 2006, Miniaturized Optical Measurement Methods for Surface Nanometrology, Annals of CIRP, 55, 577, 10.1016/S0007-8506(07)60486-7 Lee, 1987, An In-Process Measurement Technique Using Laser for Non-Contact Monitoring of Surface Roughness and Form Accuracy of Ground Surface, Annals of CIRP, 36, 425, 10.1016/S0007-8506(07)62637-7 Zhang, 2004, A Confocal Probe Based on Time Difference Measurement, Annals of CIRP, 53, 417, 10.1016/S0007-8506(07)60729-X You, 2008, Optical Inspection of Complex Patterns of Microelectronics Products, Annals of CIRP, 57, 505, 10.1016/j.cirp.2008.03.127 Lonardo, 1991, Surface Characterization and Defect Detection by Analysis of Images Obtained with Coherent Light, Annals of CIRP, 40, 541, 10.1016/S0007-8506(07)62049-6 Miyoshi, 1995, Nanometer Measurement of Silicon Wafer Surface Texture Based on Fraunhofer Diffraction Pattern, Annals of CIRP, 44, 489, 10.1016/S0007-8506(07)62369-5 Takahashi, 1998, In-Process Measurement Method for Detection and Discrimination of Silicon Wafer Surface Defects by Laser Scattered Defect Pattern, Annals of CIRP, 47, 459, 10.1016/S0007-8506(07)62874-1 Miyoshi, 2001, High Sensitivity Optical Detection of Oriented Microdefects on Silicon Wafer Surfaces Using Annular Illumination, Annals of CIRP, 50, 389, 10.1016/S0007-8506(07)62147-7 Moriya, 1995, Detection and Identification of Near-Surface Microprecipitates in Silicon Wafers by Laser Scattering Tomography, Japanese Journal of Applied Physics, 34, 5721, 10.1143/JJAP.34.5721 Oda, 1992, Defects in and Device Properties of Semi-Insulating GaAs, Semiconductor Science and Technology, 7, A215, 10.1088/0268-1242/7/1A/042 Takahashi, 2005, Development of an Evanescent Light Measurement System for Si Wafer Microdefect Detection, Key Engineering Materials, 295–296, 15, 10.4028/www.scientific.net/KEM.295-296.15 Usuki, 2006, Development of Super-Resolution Optical Inspection System for Semiconductor Defects Using Standing Wave Illumination Shift, SPIE, 6375, 637508 Lucca, 1998, Progress in Assessing Surface and Subsurface Integrity, Annals of CIRP, 47, 669, 10.1016/S0007-8506(07)63248-X Liao, 1995, Total Internal Reflection Microscopy (TIRM) as a Nondestructive Subsurface Damage Assessment Tool, SPIE, 2428, 43 Kranenberg, 1994, Subsurface Damage Identification in Optically Transparent Materials Using a Nondestructive Method, Applied Optics, 33, 4248, 10.1364/AO.33.004248 Temple, 1981, Total Internal Reflection Microscopy: A Surface Inspection Technique, Applied Optics, 20, 2656, 10.1364/AO.20.002656 Takahashi, 2008, Theoretical and Numerical Analysis of Lateral Resolution Improvement Characteristics for Fluorescence Microscopy using Standing Evanescent Light with Image Retrieval, Measurement Science and Technology, 19, 084006, 10.1088/0957-0233/19/8/084006 Gustafsson, 2000, Surpassing the Lateral Resolution Limit by a Factor of Two using Structured Illumination Microscopy, Journal of Microscopy, 198, 82, 10.1046/j.1365-2818.2000.00710.x Harris, 1964, Diffraction and Resolving Power, Journal of Optical Society of America, 54, 931, 10.1364/JOSA.54.000931 Lucy, 1974, An Iterative Technique for the Rectification of Observed Distributions, Astronomical Journal, 79, 745, 10.1086/111605