Subretinal Semiconductor Microphotodiode Array

Ophthalmic Surgery Lasers and Imaging Retina - Tập 29 Số 3 - Trang 234-241 - 1998
Gholam A. Peyman, Alan Y. Chow, Sushil K. Jain, Vincent Y. Chow, Jay I. Perlman, Neal S. Peachey

Tóm tắt

* BACKGROUND AND OBJECTIVE: To examine the function of a semiconductor microphotodiode array (SMA) surgically implanted in the subretinal space. * MATERIALS AND METHODS: Positive-intrinsic layer-negative (PiN) or negative-intrinsic layer-positive (NiP) SMAs were surgically placed into the subretinal space of rabbits through a pars plana incision and a posterior retinotomy. The implants required no external connections for power and were sensitive to light over the visible and infrared (IR) spectrum; IR stimuli were used to isolate implant-mediated responses from the activity of native photoreceptors. A stimulator ophthalmoscope was used to superimpose IR stimuli on the implant and adjacent retinal areas, and responses were recorded during the postoperative recovery period. SMA responses were also evaluated in vitro. The animals were given lethal anesthetic overdoses, and the retinas were examined histologically. * RESULTS: The in vitro implant response consisted of an electrical spike, followed by a small-amplitude DC offset that followed the time course of the IR stimulation, and an overshoot at the stimulus offset. The SMAs placed in the subretinal space retained a stable position and continued to function throughout the postoperative period. The SMA responses recorded in vivo included additional slow-wave components that were absent from the in vitro recordings. These responses reverted to the in vitro configuration following the death of the animal. There was a significant loss of retinal cells in areas overlying the implant, and the retina appeared normal away from the implant and surgical site. * CONCLUSION: SMAs can be successfully implanted into the subretinal space and will generate current in response to light stimulation during an extended period of time. [Ophthalmic Surg Lasers 1998;29:234-241.]

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