T. Ando, 1982, Rev. Mod. Phys., 54, 437, 10.1103/RevModPhys.54.437
M. Shirahata, 1987, Jpn. J. Appl. Phys., Part 1, 26, 1447, 10.1143/JJAP.26.1447
M. V. Fischetti, 1993, Phys. Rev. B, 48, 2244, 10.1103/PhysRevB.48.2244
S. Takagi, 1996, J. Appl. Phys., 80, 1567, 10.1063/1.362953
J. M. Hinckley, 1989, Appl. Phys. Lett., 55, 2008, 10.1063/1.102147
M. V. Fischetti, 1996, J. Appl. Phys., 80, 2234, 10.1063/1.363052
F. M. Bufler, 1997, Appl. Phys. Lett., 70, 2144, 10.1063/1.119259
D. K. Nayak, 1994, Appl. Phys. Lett., 64, 2514, 10.1063/1.111558
S. Kawaji, 1969, J. Phys. Soc. Jpn., 27, 906, 10.1143/JPSJ.27.906
Deepak K. Nayak, 1996, IEEE Trans. Electron Devices, 43, 1709, 10.1109/16.536817
G. Dresselhaus, 1955, Phys. Rev., 98, 368, 10.1103/PhysRev.98.368
J. M. Luttinger, 1956, Phys. Rev., 102, 1030, 10.1103/PhysRev.102.1030
G. L. Bir, 1974, Symmetry and Strain-Induced Effects in Semiconductors
M. M. Rieger, 1993, Phys. Rev. B, 48, 14, 10.1103/PhysRevB.48.14276
C. Y. P. Chao, 1992, Phys. Rev. B, 46, 4110, 10.1103/PhysRevB.46.4110
Y. X. Liu, 1996, Phys. Rev. B, 54, 5675, 10.1103/PhysRevB.54.5675
Q. G. Zhu, 1983, Phys. Rev. B, 27, 3519, 10.1103/PhysRevB.27.3519
C. Aversa, 1994, Phys. Rev. B, 49, 14, 10.1103/PhysRevB.49.14542
R. Balian, 1995, Phys. Rev. B, 51,, 17, 10.1103/PhysRevB.51.17624
G. P. Schwartz, 1989, Phys. Rev. B, 39, 1235, 10.1103/PhysRevB.39.1235
A. D. Katnani, 1983, Phys. Rev. B, 28, 1944, 10.1103/PhysRevB.28.1944
E. T. Yu, 1990, Appl. Phys. Lett., 56, 569, 10.1063/1.102747
L. Colombo, 1991, Phys. Rev. B, 44, 5572, 10.1103/PhysRevB.44.5572
J. D. Wiley, 1970, Solid State Commun., 8, 1865, 10.1016/0038-1098(70)90336-4
L. D. Laude, 1971, Phys. Rev. B, 3, 2623, 10.1103/PhysRevB.3.2623
M. Costato, 1973, Phys. Status Solidi B, 58, 471, 10.1002/pssb.2220580206
C. Tserbak, 1993, Phys. Rev. B, 47, 7104, 10.1103/PhysRevB.47.7104
C. G. Van de Walle, 1986, Phys. Rev. B, 34, 5621, 10.1103/PhysRevB.34.5621
M. Cardona, 1966, Phys. Rev., 142, 530, 10.1103/PhysRev.142.530
P. Friede, 1989, Phys. Rev. B, 39, 7974, 10.1103/PhysRevB.39.7974
R. A. Logan, 1964, Phys. Rev., 136, A1751, 10.1103/PhysRev.136.A1751
L. W. Wang, 1996, Phys. Rev. B, 54, 11
F. Szmulowicz, 1983, Phys. Rev. B, 34, 4031, 10.1103/PhysRevB.34.4031
S. M. Goodnick, 1985, Phys. Rev. B, 32, 8171, 10.1103/PhysRevB.32.8171
S. Yamakawa, 1996, J. Appl. Phys., 79, 911, 10.1063/1.360871
R. M. Feenstra, 1995, J. Appl. Phys., 78, 6091, 10.1063/1.360549
K. Takeda, 1983, J. Phys. C, 16, 2237, 10.1088/0022-3719/16/12/013
M. Fischetti, 1991, IEEE Trans. Electron Devices, 38, 634, 10.1109/16.75176
C. Jacoboni, 1983, Rev. Mod. Phys., 55, 645, 10.1103/RevModPhys.55.645
Jim Dewey, 1993, J. Appl. Phys., 74, 3219, 10.1063/1.354595
J. M. Hinckley, 1994, J. Appl. Phys., 76, 4192, 10.1063/1.357373
T. Yamada, 1995, Solid-State Electron., 38, 881, 10.1016/0038-1101(94)00123-W
G. Ottaviani, 1975, Phys. Rev. B, 12, 3318, 10.1103/PhysRevB.12.3318
T. Yamada, 1994, Phys. Rev. B, 49, 1875, 10.1103/PhysRevB.49.1875
P. J. Price, 1981, Ann. Phys. (N.Y.), 133, 217, 10.1016/0003-4916(81)90250-5
M. V. Fischetti, 1988, Phys. Rev. B, 38, 9721, 10.1103/PhysRevB.38.9721
I. H. Tan, 1994, J. Appl. Phys., 68, 4071, 10.1063/1.346245
D. Singh, 1986, Phys. Rev. B, 34, 8391, 10.1103/PhysRevB.34.8391
G. Wiesenekker, 1988, J. Phys. C, 21, 4263, 10.1088/0022-3719/21/23/012
C. Hamaguchi, 1985, Physica (Utrecht), 134, 87
S. Takagi, 1994, IEEE Trans. Electron Devices, 41, 2367
C. K. Maiti, 1997, Solid-State Electron., 41, 1836, 10.1016/S0038-1101(97)00152-4
