Study on the correlation between crystallite size and optical gap energy of doped ZnO thin film
Tóm tắt
In the present paper, we have studied a new approach to the description ofcorrelation between the optical and structural properties of ZnO thin films withdoping levels of Al, Co, and In. The doped zinc oxide thin films were depositedusing ultrasonic spray technique on a glass substrate at 350°C. Thecorrelation between structural and optical properties with doping level suggeststhat the crystallite size of the films is predominantly estimated by the bandgapenergy and the concentration of Al, Co, and In. Also, the gap energy of dopedfilms was estimated by the crystallite size and doping level. The measurement inthe crystallite size and optical gap energy of doped films with correlation isequal to the experimental data. The minimum error value was estimated in dopedZnO thin films with indium and cobalt. Thus, results indicate that such Co-dopedZnO thin films are chemically purer and have many fewer defects and lessdisorder, owing to an almost complete chemical decomposition.
Tài liệu tham khảo
Ohtsu M: Progress in Nano-Electro Optics VII. Tokyo; 2002:73–108.
Zhang Y, Wu C, Zheng Y, Guo T: Synthesis and efficient field emission characteristics of patterned ZnOnanowires. J. Semicond. 2012, 33: 023001–1. 10.1088/1674-4926/33/2/023001
Zhang H, Liu H, Lei C, Zhou A, Yuan C: Low-temperature deposition of transparent conducting Mn–W co-doped ZnOthin films. J. Semicond. 2010, 31: 083005–1. 10.1088/1674-4926/31/8/083005
Benramache S, Benhaoua B, Khechai N, Chabane F: Elaboration and characterization of ZnO thin films. Matériaux Tech. 2012, 100: 573–580. 10.1051/mattech/2012052
Ma L, Ai X, Huang X, Ma S: Effects of the substrate and oxygen partial pressure on the microstructuresand optical properties of Ti-doped ZnO thin films. Superlattice. Microst. 2011, 50: 703–712. 10.1016/j.spmi.2011.09.012
Wang SK, Lin TC, Jian SR, Juang JY, Jang JSC, Tseng JY: Effects of post-annealing on the structural and nanomechanical properties ofGa-doped ZnO thin films deposited on glass substrate by rf-magnetronsputtering. Appl. Surf. Sci. 2011, 258: 1261–1266. 10.1016/j.apsusc.2011.09.088
Mazhdi M, Saydi J, Karimi M, Seidi J, Mazhdi F: A study on optical, photoluminescence and thermoluminescence properties ofZnO and Mn doped-ZnO nanocrystalline particles. Optik 2011, 124: 4128–4133.
Hafdallah A, Yanineb F, Aida MS, Attaf N: In doped ZnO thin films. J. Alloys. Compd. 2011, 509: 7267–7270. 10.1016/j.jallcom.2011.04.058
Rahmane S, Djouadi MA, Aida MS, Barreau N, Abdallah B, Hadj Zoubir N: Power and pressure effects upon magnetron sputtered aluminum doped ZnO filmsproperties. Thin Solid Films 2010, 519: 5–10. 10.1016/j.tsf.2010.06.063
Van LH, Hong MH, Ding J: Structural and magnetic property of Co-doped ZnO thin films prepared bypulsed laser deposition. J. Alloys. Compd. 2008, 449: 207–209. 10.1016/j.jallcom.2006.02.114
Mhamdi A, Boukhachem A, Madani M, Lachheb H, Boubaker K, Amlouk A, Amlouk M: Study of vanadium doping effects on structural, opto-thermal and opticalproperties of sprayed ZnO semiconductor layers. Optik 2013, 124: 3764–3770. 10.1016/j.ijleo.2012.11.074
Rozati SM, Akesteh S: Characterization of ZnO:Al thin films obtained by spray pyrolysistechnique. Mater. Charact. 2007, 58: 319–323. 10.1016/j.matchar.2006.05.012
Ma QB, Ye ZZ, He HP, Wang JR, Zhu LP, Zhao BH: Preparation and characterization of transparent conductive ZnO:Ga films by DCreactive magnetron sputtering. Mater. Charact. 2008, 59: 124–129. 10.1016/j.matchar.2006.11.020
Ramana CV, Smith RJ, Hussain OM: Grain size effects on the optical characteristics of pulsed-laser depositedvanadium oxide thin films. Phys. Stat. Sol. A 2003, 199: R4-R6. 10.1002/pssa.200309009
Bensouyad H, Adnane D, Dehdouh H, Toubal B, Brahimi M, Sedrati H, Bensaha R: Correlation between structural and optical propertiesof TiO2:ZnO thin filmsprepared by sol–gel method. J. Sol–gel Sci. Technol. 2011, 59: 546–552.
Ton-That C, Foley M, Phillips MR, Tsuzuki T, Smith Z: Correlation between the structural and optical properties of Mn-doped ZnOnanoparticles. J. Alloys. Compd. 2012, 522: 114–117.
Joshi B, Ghosh S, Srivastava P, Kumar P, Kanjilal D: Correlation between electrical transport, microstructure and room temperatureferromagnetism in 200 keV Ni2+ ion implanted zinc oxide (ZnO)thin films. Appl. Physica. 2012, 107: 393–400.
Wang SD, Miyadera T, Minari T, Aoyagi Y, Tsukagoshi K: Correlation between grain size and device parameters in pentacene thin filmtransistors. Appl. Phys. Lett. 2008, 93: 043311–1. 10.1063/1.2967193
Minami T, Nanto H, Takata S: Correlation between film quality and photoluminescence in sputtered ZnO thinfilms. J. Mater. Sci. 1982, 17: 1364–1368. 10.1007/BF00752247
Zhu JJ, Vines L, Aaltonen T, Kuznetsov AY: Correlation between nitrogen and carbon incorporation into MOVPE ZnO atvarious oxidizing conditions. Microelectronics J. 2009, 40: 232–235. 10.1016/j.mejo.2008.07.042
Deng R, Zou Y, Tang H: Correlation between electrical, optical properties and Ag2+centers of ZnO:Ag thin films. Physica. B. 2008, 403: 2004–2007. 10.1016/j.physb.2007.11.007
Ajimsha RS, Das AK, Singh BN, Misra P, Kukreja LM: Correlation between electrical and optical properties of Cr:ZnO thin filmsgrown by pulsed laser deposition. Physica. B. 2011, 406: 4578–4583. 10.1016/j.physb.2011.09.024
Gredig T, Silverstein EA, Byrne MP: Height-height correlation function to determine grain size in ironphthalocyanine thin films. J. Phys. Conference Series 2013, 417: 012069–5.
Vollmann W, Berger W, Hamann C, Libera L: Relations between the morphology and conductivity of thin films oftetrathiofulvalinium-tetracyanoquinodimethane. Thin Solid Films 1984, 111: 7–16. 10.1016/0040-6090(84)90344-4
Asadov A, Gao W, Li Z, Lee J, Hodgson M: Correlation between structural and electrical properties of ZnO thinfilms. Thin Solid Films 2005, 476: 201–205. 10.1016/j.tsf.2004.09.038
Benramache S, Chabane F, Benhaoua B, Lemmadi F: Influence of growth time on crystalline structure, conductivity and opticalproperties of ZnO thin films. J. Semicond. 2013, 34: 023001–1. 10.1088/1674-4926/34/2/023001
Gahtar A, Benramache S, Benhaoua B, Chabane F: Preparation of transparent conducting ZnO:Al films on glass substrates byultrasonic spray technique. J. Semicond. 2013, 34: 073001–1. 10.1088/1674-4926/34/7/073001
Benramache S, Benhaoua B, Bentrah H: Preparation of transparent conducting of ZnO:Co and ZnO:In thin films byultrasonic spray method. J. Nanostruct. Chemist. 2013, 3: 1–7.
Benramache S, Benhaoua B, Chabane F: Effect of substrate temperature on the stability of transparent conductingcobalt doped ZnO thin films. J. Semicond. 2012, 33: 093001–1. 10.1088/1674-4926/33/9/093001
Benramache S, Benhaoua B: Influence of substrate temperature and cobalt concentration on structural andoptical properties of ZnO thin films prepared by ultrasonic spraytechnique. Superlattice. Microst. 2012, 52: 807–815. 10.1016/j.spmi.2012.06.005
Benramache S, Benhaoua B: Influence of annealing temperature on structural and optical properties ofZnO:In thin films prepared by ultrasonic spray technique. Superlattice. Microst. 2012, 52: 1062–1070. 10.1016/j.spmi.2012.08.006
Zhu BL, Zhao XZ, Su FH, Li GH, Wu XG, Wu J, Wu R: Low temperature annealing effects on the structure and optical properties ofZnO films grown by pulsed laser deposition. Vacuum 2010, 84: 128–130.